The first highly conductive polyselenophene, namely, poly(3,4-ethylenedioxyselenophene) (PEDOS), was synthesized by taking advantage of a novel method for efficiently contracting the selenophene ring. PEDOS shows a relatively low band gap (1.4 eV), very high stability in the oxidized state, and a well-defined spectroelectrochemistry.
A series of new low-band-gap thieno-or selenolo-fused polyselenophenes (P5 and P6) and selenolo-fused polythiophene (P4) (as well as previously reported thieno-fused polythiophene, P3) was prepared systematically by electropolymerization (P4-P6) and by solid-state polymerization (P3, P5 and P6). The 2,5-dibrominated monomers (3Br 2 , 5Br 2 , and 6Br 2 ) undergo solid-state polymerization under slight heating and produce insoluble P3, P5, and P6 as black conducting powders. The spectroelectrochemically measured optical band gaps of P4-P6 films are 0.96, 0.72, and 0.76 eV, respectively. DFT calculations performed on P3-P6 provide excellent estimations of the experimental band gaps of these polymers. The band gap of the polyselenophenes (P5 and P6) is 0.2 eV lower than that of the corresponding polythiophenes (P3 and P4). We introduced a new scheme for band gap control in conjugated polymers by replacing the sulfur atom with a selenium atom in the main and/or peripheral ring, which leads to significant and predictable changes in the band gap of the polymers. This is due to the lower aromaticity of a selenophene ring compared to a thiophene ring. Thus, we have achieved band gap control in very low band gap (∼0.7-1.0 eV) polymers through the use of different combinations of selenium and sulfur atoms in the main and peripheral rings.
Surprisingly, despite its very high mobility in a single crystal, rubrene shows very low mobility in vacuum-sublimed or solution-processed organic thin-film transistors. We synthesized several rubrene analogues with electron-withdrawing and electron-donating substituents and found that most of the substituted rubrenes are not planar in the solid state. Moreover, we conclude (based on experimental and calculated data) that even parent rubrene is not planar in solution and in thin films. This discovery explains why high mobility is reported in rubrene single crystals, but rubrene shows very low field-effect mobility in thin films. The substituted rubrenes obtained in this work have significantly better solubility than parent rubrene and some even form films and not crystals after evaporation of the solvent. Thus, substituted rubrenes are promising materials for organic light-emitting diode (OLED) applications.
The ever-increasing flow of information requires new approaches for high-density data storage (HDDS). Here, we present a novel solution that incorporates the easily accessible polymer poly(3,4-ethylenedioxythiophene) (PEDOT) with multistate memory. The electrical addressable polymer is able to store up to five different memory states, which are stable up to 20 min. The observed memory states are generated by the optical output signature of the PEDOT deposited on indium tin oxide (ITO) coated glass, upon applying specific electrical inputs. Moreover, the demonstrated platforms can be represented by a general logic circuit, which allows the construction of multistate memory, such as flip-flops and flip-flap-flop logic circuits.
3,4-Dimethoxytellurophene (5) was synthesized via a new ring construction reaction. The crystal structure of 5 is characterized by unusually short Te...Te distances. The electropolymerization of 5 probably produces some amount of poly-5. Since the product was unstable under experimental conditions, a definitive assignment could not be made. However, the UV-vis spectrum recoded during electropolymerization of 5 shows an absorption peak at 679 nm with an onset at 820 nm (1.51 eV), closely matching the calculated band gap of poly-5.
Polyfuran films produced by electropolymerization of a series of oligofurans substituted with alkyl groups show improved properties, such as good conductivity and stability, well-defined spectroelectrochemistry and smooth morphology.
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