Articles you may be interested inFundamental factors governing improved performance of Al-Si/Ti multilayer metallization for very large scale integration J. Vac. Sci. Technol. A 7, 1497 (1989); 10.1116/1.576085 Self-aligned silicides or metals for very large scale integrated circuit applications A comparison of gettering techniques for very large scale integrationA molybdenum silicide (Mo-silicide) film deposited on a quartz glass substrate offers major advantages as a high performance photomask material for very large scale integrated (VLSI) fabrication. There is no pattern missing due to exfoliation after ultrasonic cleaning with frequency of28 kHz and 300 W of power, and after being scrubbed over 10 cycles with a high pressure water jet. Reflectivity and optical density of the Mo-silicide film are not affected by acidic chemicals. Moreover, dry etching can be done at a rate of 50 nm/min; more than five times as fast as etching of a chromium (Cr) mask.
Properties of DC-sputtered W-Ti absorber films such as internal stress, density and microstructure were systematically investigated for X-ray mask application. Smooth, stress-free amorphous W-Ti films with a comparatively high density of 16.5-17.0 g/cm3 were obtained by optimizing several conditions: gas pressure, N2 content in the working gas, DC power density and annealing temperature. The reproducibility of the film stress was about ±5×107 Pa. Reproducibility was found to be mainly determined by the degree to which the sputtering tool used could be controlled. Furthermore, it was confirmed that the optimized absorber films offered good stability under stress within 1×107 Pa when stored in an air atmosphere for more than 250 days.
An X-ray mask fabrication technology using a tungsten (W) absorber with a chromium (Cr) mask and indium titanium oxide (ITO) stopper was developed. When SF6 was used as the dry etching gas, substantial side etching occurred because the F radical reacts with W on the sidewall. In order to prevent side etching, a SF6 and CHF3 gas mixture was applied; however, the ratio of dry etching rate of W to that of resist is low. Furthermore, the underlying layer such as that of silicon dioxide (SiO2), which was used as the etching stopper, was easily damaged. Instead of a resist mask and SiO2 stopper, a Cr layer as the etching mask and ITO layer as the stopper layer were applied. By the use of these structures and etching procedures, high aspect ratio W patterns with vertical sidewalls have been successfully fabricated.
A new highspeed simulation method for electronbeam critical dimension metrology profile modeling For studying the technology of the critical dimension measurement using an electron beam (EB), a computer simulation based on the Monte Carlo and the surface charge methods is carried out, and a wave form of backscattered electrons (BE's), which hardly suffer from the charging phenomenon, is precisely analyzed using this simulation. First, line widths obtained individually by threshold, maximum slope, and linear approximation methods are examined about various incident-EB conditions such as an accelerating voltage and a beam diameter. The dependencies of pattern structures, such as dimension, side-wall angle, and materials of the patterns, on measured line width are evaluated next. As a result ofthese calculations, it is found that the variation of the incident-EB conditions doesn't affect practically the results of the line-width measurement in BEdetection systems, while secondary-electron signals are easily deformed by the charging phenomenon. Although the measured width much depends on the pattern structure, the linear approximation method is comparatively suitable for the purpose of obtaining the width of bottom edges in BE-detection systems. 73
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