The authors have examined the role of sub nanometer La2O3 and LaN cap layers interposed in Si∕HfO2∕TiN high-k gate dielectric stacks in tuning the flatband and threshold voltages of capacitors and transistors. High performance, band edge n metal oxide field effect transistors with channel lengths down to 60nm may be fabricated without significant compromise in mobility, electrical thickness, and threshold voltage. They have carried out a microstructural evaluation of these stacks and correlated these results with the electrical behavior of the devices.
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