The present paper concerns a new manufacturing process for emission structures with Vertical Thin Film Emitters (VTFE). Simple methods of directional vacuum deposition for different materials were employed in the above process, VTFE were fabricated via deposition of Cr, Ti layers on Cu posts with Cr caps, located on a substrate, followed by dissolution of Cu posts. Thus produced emission structures had VTFE density of 2.88x106emitters/cm2. The height of W F E ungated structures was -5 . 5 -5 . 8~. The extraction field of Ti WFE structures was -15-20V/pm. The possibility to employ a foregoing process for gated structures with VTFE was demonstrated.
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