We are interested in our study of the III-V nitrides to the In x Ga 1-x N/GaN quantum dots, where x = 17.5 % denotes the indium concentration. The adopted model to describe these III-V nitride quantum dots is that of In x Ga 1-x N truncated cones of radius r c lying on wetting layer, both buried into GaN matrix. This model is consistent with recent experimental works. We examine the internal electric field and radius r c of the quantum dots effects on the ground state transition energies of the electron and the hole. Our results are in sound agreement with recent experimental data.1 Introduction III-V nitride semiconductors have been investigated very extensively in the last decade. GaN is a direct and wide band-gap semiconductor and when alloyed with InN and AlN, a spectrum from visible to ultraviolet can be covered. III-V nitride nanostructures are strongly polar crystal as compared to GaAs-based compounds, and thus shown a piezoelectric effect. Macroscopic polarization, both in intrinsic and piezoelectric nature, is unusually strong in III-V nitride, and the built in electric fields in the layers of nitride-based nanostructures, stemming from polarization changes at heterointerfaces. The strong built in electric field of the order of few MV/cm is oriented along the growth direction and has opposite sign inside and outside the quantum dots (QDs) [1,2]. This is considerably stronger than in GaAs-based nanostructures because the piezoelectric constants in nitrides are orders of magnitude greater than in other III-V compounds. Our main goal is to examine how the electric field and the QDs basis radius r c affect the ground state transition energies of the electron and the hole. We are essentially interested to In x Ga 1-x N/GaN III-V nanostructures QDs.The paper is organized in the following way. In Section 2, we present the model and our numerical approach. In Section 3, the electron and the hole energy levels have been calculated. This is followed in Section 4 by the presentation of how basis radius of the QDs and the applied electric field affect the electron-hole ground state transition energies. Finally, in Section 5 we summarize the main conclusions.
In this work we report on the calculation of the correlation energies of excitonic complexes in the III-V nanostructures InAs/GaAs and In x Ga 1−x N/GaN quantum dots. We examine how the electric field and the basis radius r c of the quantum dots affect these energies. The results presented in this work are in sound agreement with recent experimental observations.
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