Excitonic complexes correlation energies in individual biased InAs/GaAs and InGaN/GaN quantum dots

Abstract

In this work we report on the calculation of the correlation energies of excitonic complexes in the III-V nanostructures InAs/GaAs and In x Ga 1−x N/GaN quantum dots. We examine how the electric field and the basis radius r c of the quantum dots affect these energies. The results presented in this work are in sound agreement with recent experimental observations.