Articles you may be interested inEffects of interface donors on far infrared photoresponse at cyclotron resonance in a (AlGa)As/GaAs heterojunction J.Effects of carrier confinement in graded AlGaAs/GaAs heterojunctions Appl. Phys. Lett. 45, 739 (1984); 10.1063/1.95381
Measurements of refractive index step and of carrier confinement at (AlGa)As-GaAs heterojunctionsAn unusual new line has been observed in the low-temperature photoluminescence spectrum of GaAsl AIGaAs epilayers grown by liquid-phase epitaxy, which represents a unique probe of the heterointerface. A very strong, broad and asymmetric line is seen, with peak energy ranging from that of the bound exciton to that of the shallowest acceptor, increasing roughly linearly with the logarithm of the excitation power. The intensity is seen to exhibit a very strong temperature dependence as the temperature is varied from 1.4 K up to about 20 K where the line falls below the background luminescence intensity. Intensity and energy dependence of the luminescence as a function of the Al mole fraction on one side of the junction is also investigated. By employing a novel step-etching technique, this transition is shown to originate from the GaAsl AIGaAs heterojunction. A qualitative model is proposed to explain the observed data.
An unusual new line has been observed in the 1.4-K photoluminescence spectrum of GaAs/AlGaAs epilayers grown by liquid phase epitaxy. A very strong, broad, and asymmetric line is seen, with peak energy ranging from the bound exciton to the shallowest acceptor, increasing roughly linearly with the logarithm of the excitation power. By employing a novel step-etching technique, this transition is shown to originate from the GaAs/AlGaAs heterojunction. A qualitative model is proposed to explain the observed data.
A new method of open tube zinc diffusion into AlGaAs and GaAs using a confined chamber has been developed. The depth and quality of Zn diffusion into GaAs and AlxGa1−xAs (0.1≤x≤0.5) at 700 °C, are compared with the traditional closed tube diffusion process. It is seen that the new process provides for a very well controlled diffusion depth and allows shallow diffusion. The specific resistivity and surface carrier concentration are measured by the Van der Pauw method. The diffusion quality is affected by the choice of solvent metals. Some variations of solvent metals are discussed. This technique is used for improvement of ohmic contacts in monolithic integrated-optical devices.
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