Processing And Performance Of Guided-Wave Devices In GaAs/AℓGaAs

Yuan, Y. R.; Vawter, G.A.; Eda, Kazuo; Merz, J. L.; Kincaid, B. E.

doi:10.1117/12.939458

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Design Considerations For a Directional Coupler Switch1

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1988

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“…Implementation of the chemical etch and deposited oxide, coupled with large areas of high quality LPE grown AlGaAs [1], has already allowed us to reduce a to values which consistently lay between 0.5 and 2 cm"" for single rib guides and directional coupler pairs at both 0.87 and 1.06pm wavelength. This low a includes a dominant contribution by free carrier absorption, calculated to be about 0.3 cm for our undoped layers.…”

Section: Resultsmentioning

confidence: 99%

“…The result is the required mismatch of the wave vector (ß) of the two guides as a function of the normalized interaction length L/ß for both states. Provided that the interaction length is between 2 and 3ß the requirement is that 20i -ß2)L < n (1) where ßl and 132 are the wave vectors in the two guides and L is the interaction length. This criteria includes both states with the nonswitched state requiring a larger Oß than the switched state.…”

Section: Design Considerations For a Directional Coupler Switchmentioning

confidence: 99%

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