We have demonstrated well-behaved accumulation-mode all oxide NMOSFETs with amorphous atomic-layer-deposited (ALD) LaAlO 3 gate dielectric stacks on crystalline SrTiO 3 substrates. A maximum drain current exceeding 10 mA/mm has been obtained on a 3.75μm-gate-length device, proving a very conductive channel can be formed at the oxide-oxide interface. Four different gate dielectric stacks, which are Lafirst cycle LaAlO 3 , Al-first cycle LaAlO 3 , LaAlO 3 with 1.5 nm La 2 O 3 interfacial layer, and LaAlO 3 with 1.8 nm Al 2 O 3 interfacial layer, have been deposited on SrTiO 3 substrates to systematically study their effects on the conductivity at the different oxide-oxide interfaces. The experimental results show that a La-initiated interfacial layer is preferable to form a more conducting channel at the LaAlO 3 /SrTiO 3 interface. Low temperature characteristics have also been utilized to provide an in-depth understanding of the channel formation at the oxideoxide interface. The availability of the MBE technology to epitaxially grow SrTiO 3 on Si substrate provides the pathway to integrate ALD LaAlO 3 /SrTiO 3 devices on Si platform.
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