The epitaxial regrowth of the implantation-induced amorphous layer in (11̄00)- and (112̄0)-oriented 6H-SiC has been investigated at annealing temperatures below 800 °C using Rutherford backscattering spectrometry and transmission electron microscopy. The surface region of sample is amorphized by the Ar+ ion implantation with an energy of 100 keV at a dose of 2×1015/cm2. The implantation-induced amorphous layer epitaxially regrows at annealing temperatures above 700 °C without the inclusion of other polytype crystals such as 3C-SiC and twinned defects. The regrowth rate is estimated to be about 0.4 nm/min at 700 °C and is proportional to the annealing temperature with an activation energy of about 3.4 eV for both (11̄00)- and (112̄0)-oriented 6H-SiC.
The substitutional site of the implanted Ga impurity in (11̄00)-oriented 6H-SiC has been investigated using the preferential scattering effect of He ions. The Si and C monoatomic strings are preferentially observed by the angular scans across 〈11̄00〉 axial channels parallel to (112̄0) plane. Ga ions are implanted at an energy of 400 keV to a dose of 5×1015/cm2 through 200-nm-thick SiO2 at room temperature. In the samples annealed at 1200 °C for 30 min, the implanted Ga impurities in SiC are located preferentially on the Si sublattice sites rather than on the C sublattice sites in 6H-SiC.
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