Preservation of polytypic structure in implanted 4H-SiC(100)

Satoh, Masataka; Okamoto, Kazumasa; Nakaike, Y.; Kuriyama, K.; Kanaya, Masatoshi; Ohtani, Noboru

doi:10.1016/s0168-583x(98)00888-x

Cited by 17 publications

(7 citation statements)

References 3 publications

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“…The present results are generally consistent with the experimental observations. The nucleation of secondary ordered phases within the amorphous region supports the previous assumption that the formation of these polytype crystals may arise from the random arrangement of Si and C atoms during the regrowth [16]. The present results, along with those of the ( 1010)-orientated 4H-SiC model [15], demonstrate that the recrystallization of the amorphous layers extended along the [0001] or [ 1010] directions can lead to the formation of secondary phases at 2000 K. However, it is interesting to note that secondary ordered phases can nucleate and grow into large microcrystalline domains at 1500 K in the present model, but only epitaxial recrystallization at the interfaces occurs at the same temperature in the ( 1010)-orientated 4H-SiC model [15].…”

Section: Annealing Simulation Of I Y Modelsupporting

confidence: 83%

“…The recrystallization process of ion-implantation-induced amorphous layers in 4H-SiC has been investigated experimentally for (0001)-orientated 4H-SiC [16], such that a full comparison can be made. Annealing of the amorphous layers in (0001)-orientated 4H-SiC at 1723 K showed that the regrowth induced other polytype crystals that can be identified as 3Cand 4H-SiC, but their crystallographic orientations were different from those of the original 4H-SiC.…”

Section: Annealing Simulation Of I Y Modelmentioning

confidence: 99%

“…The recrystallization processes for ion-implantationinduced amorphous layers in 4H-SiC [16,17] have recently been investigated over the temperature range from 1200 to 1973 K. Satoh et al [16,17] demonstrated that implantationinduced amorphous 4H-SiC epilayers oriented in the [1 100] or [11 20] direction could largely be recrystallized at 1773 K and preserve the polytype of the underlying layer, whereas [0001]oriented 4H-SiC epilayers are highly defective and contains various polytype crystals such as 3C-SiC. Furthermore, the regrowth rate for [11 20]-oriented SiC is faster than that for [1 100]-oriented samples.…”

Section: Introductionmentioning

confidence: 99%

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Computational study of anisotropic epitaxial recrystallization in 4H-SiC

Gao

Zhang

Posselt

et al. 2008

J. Phys.: Condens. Matter

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Two nano-sized amorphous layers were created within a crystalline cell to study anisotropic expitaxial recrystallization using molecular dynamics (MD) methods in 4H-SiC. Both amorphous layers were created with the normal of the amorphous-crystalline (a-c) interfaces along the [0001] direction, but one had a microscopic extension along the [ 12 10] direction, i.e. the dimension along the [ 12 10] direction is much larger than that along the [ 1010] direction (I x model), and the other had a microscopic extension along the [ 1010] direction (I y model). The amorphous layer within the I x model can be completely recrystallized at 2000 K within an achievable simulation time, and the recrystallization is driven by a step-regrowth mechanism. On the other hand, the nucleation and growth of secondary ordered phases are observed at high temperatures in the I y model. The temperature for recrystallization of the amorphous layer into high-quality 4H-SiC is estimated to be below 1500 K. Compared with other models, it is found that the regrowth rates and recrystallization mechanisms depend strongly on the orientation of 4H-SiC, whereas the activation energy spectra for recrystallization processes are independent of any specific polytypic structure, with activation energies ranging from 0.8 to 1.7 eV.

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Section: Annealing Simulation Of I Y Modelsupporting

confidence: 83%

Section: Annealing Simulation Of I Y Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Computational study of anisotropic epitaxial recrystallization in 4H-SiC

Gao

Zhang

Posselt

et al. 2008

J. Phys.: Condens. Matter

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“…A few papers have reported the presence of 3C polytype inclusions in ͑0001͒ amorphized hexagonal SiC crystals. 2,[14][15][16] The observation of polytype transformation in the form of 3C lamellae has been a subject of recent interest. [17][18][19][20][21] This type of polytype transformation was first observed after oxidation and originally attributed to stacking fault formation due to interstitial precipitation, similar to the mechanism of oxidation induced stacking fault formation observed in silicon crystals.…”

Section: Introductionmentioning

confidence: 99%

Ion-implantation-induced extended defect formation in (0001) and(112¯0)4H−SiC
Wong‐Leung
¹
,
Linnarsson
²
,
Svensson
³

et al. 2005
Phys. Rev. B
32
1
5
0
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We study the effect of substrate orientation namely ͑1120͒ and ͑0001͒ oriented crystals on defect formation in 4H-SiC. The microstructure of the various samples, as-implanted with P and annealed, were studied by Rutherford backscattering spectrometry and channeling and transmission electron microscopy in an attempt to understand the damage evolution and defect structures resulting from different crystal orientations and different implantation damage. The annealing of the damage results in a range of different defects including dislocation loops, voids and precipitates in both a-cut and c-cut crystals. For the c-cut crystals, we observe the formation of ͑a͒ Frank prismatic ͑0001͒ loops previously reported in implanted SiC, and ͑b͒ a second type of defects showing stacking fault contrast consistent with ͑i͒ pure Shockley partials and/or ͑ii͒ ͑0001͒ sheared interstitial defects bounded by a Shockley partial dislocation. A mechanism for the formation of the latter defects in SiC is proposed and the relative stacking fault energies of the proposed defects are estimated using calculated parameters for the axial next-nearest-neighbor Ising ͑ANNNI͒ spin model from the literature. For the a-cut crystal, we note the presence of two types of dislocation loops, with two habit planes, namely small dislocation loops located on the basal plane ͑0001͒ and large ͑1120͒ prismatic loops. In addition, larger conglomerated loops which do not necessarily have a ͑1120͒ habit plane and may be a larger variant of the ͑1120͒ prismatic loops are also observed in the a-cut sample. Small precipitates are observed pinned to these loops. Elemental profiling of the implanted species before and after annealing by secondary ion mass spectrometry revealed a correlation between precipitation close to dislocation networks and the agglomeration of phosphorus at certain depths.

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“…It is the (11 20) SiC face that is mainly studied today, due to there being fewer negative charges at the 4H-SiC oxide interface compared with the (0001) SiC face, leading to better channel mobilities and lower threshold voltages measured for planar MOSFETs [3]. Another advantage of an orientation perpendicular to the (0001) face is a better crystal reordering during the post-ion implantation annealing, achieved by avoiding site competition between cubic and hexagonal sites [4]. Studies of the structural and optical properties of (11 20)-oriented 4H-SiC wafers are then crucial.…”

Section: Introductionmentioning

confidence: 99%

Structural characterization of 6H- and 4H-SiC polytypes by means of cathodoluminescence and x-ray topography

Ottaviani

Hidalgo

Idrissi

et al. 2003

J. Phys.: Condens. Matter

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The cathodoluminescence (CL) technique is used to analyse the radiative recombination properties of four distinct silicon carbide (SiC) samples: a 6H-SiC n + -type Lely wafer, two off-axis 4H-SiC epitaxial layers of n type and p type, and a (1120)-oriented 4H-SiC n + -type substrate. The CL spectra, recorded at various temperatures and at various excitation conditions, show strong differences between the polytypes, indicating a better homogeneous distribution of radiative centres inside the 6H polytype than in the 4H one, and also between the different orientations. For the (1120)-oriented 4H sample, luminescence features decrease when the excitation intensity increases, probably due to a more significant indirect transition band. The CL spectra also vary for the same sample, due to the impurity and the microscopic defect density variations. Comparisons between two local spectra taken in two distinct areas of the (1120)-oriented 4H sample, and with images obtained by x-ray topography in the same areas, allow us to establish that some structural defects are involved in luminescence centres. A deep centre involved in green luminescence (at 1.80 eV) is found to be associated with basal plane dislocations with the Burgers vector b = (1/3) 1120 .

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Preservation of polytypic structure in implanted 4H-SiC(100)

Cited by 17 publications

References 3 publications

Computational study of anisotropic epitaxial recrystallization in 4H-SiC

Computational study of anisotropic epitaxial recrystallization in 4H-SiC

Ion-implantation-induced extended defect formation in (0001) and(112¯0)4H−SiC
Wong‐Leung
¹
,
Linnarsson
²
,
Svensson
³

et al. 2005
Phys. Rev. B
32
1
5
0
View full text Add to dashboard Cite

Structural characterization of 6H- and 4H-SiC polytypes by means of cathodoluminescence and x-ray topography

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Preservation of polytypic structure in implanted 4H-SiC(100)

Cited by 17 publications

References 3 publications

Computational study of anisotropic epitaxial recrystallization in 4H-SiC

Computational study of anisotropic epitaxial recrystallization in 4H-SiC

Ion-implantation-induced extended defect formation in (0001) and(112¯0)4H−SiCWong‐Leung1, Linnarsson2, Svensson3 et al. 2005Phys. Rev. B32150View full textAdd to dashboardCite

Structural characterization of 6H- and 4H-SiC polytypes by means of cathodoluminescence and x-ray topography

Contact Info

Product

Resources

About

Ion-implantation-induced extended defect formation in (0001) and(112¯0)4H−SiC
Wong‐Leung
¹
,
Linnarsson
²
,
Svensson
³

et al. 2005
Phys. Rev. B
32
1
5
0
View full text Add to dashboard Cite