Europium-doped β-Ga2O3 thin films were grown on double-side polished c-axis (0001) sapphire substrates by pulsed laser deposition at 850°C. Transmission measurements of the films revealed a sharp band edge with a band gap at 5.0eV. The films exhibited intense red emission at 611nm (2.03eV) due to the transitions from D05 to F27 levels in europium, with intensities that increased with the concentration of europium. Time-resolved photoluminescence measurements revealed a temperature-insensitive lifetime of 1.4ms, which is much longer than the lifetimes of europium luminescence observed in GaN hosts.
Contact selected area regrowth of GaN was performed by metal organic chemical vapor deposition using a silicon nitride dielectric hard mask to define plasma etched recesses and to define source-drain regions. A low temperature regrowth process at 750–850°C was adopted to limit lateral overgrowth. High resolution electron microscopy images and selected area diffraction confirmed the regrowth selectivity and revealed that the low temperature regrown GaN is epitaxial and has a wurtzite crystal structure. I-V characteristics of the fabricated metal oxidesemiconductor field effect transistor show enhancement mode operation.
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