We present a high-throughput method for fabricating large arrays of surface-enhanced Raman scattering (SERS) active gold dimers. Using a large-area/low-cost nanopatterning method in conjunction with a meniscus force deposition technique, we were able to create large arrays of uniformly spaced nanoclusters comprising two 60-nm gold nanospheres. Raman measurements of a thiophenol monolayer deposited on smaller scale arrays of aligned dimers yielded enhancement factors as high as 10 9 . Polarization-controlled measurements show spectral peak heights to be 10-100 times smaller when the incident beam is polarized perpendicularly to the dimer axis, confirming that the measured enhancements arise from the 'hot spots' between the two nanospheres.

This paper describes a comparative study of finite-difference time-domain (FDTD) and analytical evaluations of electromagnetic fields in the vicinity of dimers of metallic nanospheres of plasmonics-active metals. The results of these two computational methods, to determine electromagnetic field enhancement in the region often referred to as "hot spots" between the two nanospheres forming the dimer, were compared and a strong correlation observed for gold dimers. The analytical evaluation involved the use of the spherical-harmonic addition theorem to relate the multipole expansion coefficients between the two nanospheres. In these evaluations, the spacing between two nanospheres forming the dimer was varied to obtain the effect of nanoparticle spacing on the electromagnetic fields in the regions between the nanostructures. Gold and silver were the metals investigated in our work as they exhibit substantial plasmon resonance properties in the ultraviolet, visible, and near-infrared spectral regimes. The results indicate excellent correlation between the two computational methods, especially for gold nanosphere dimers with only a 5-10% difference between the two methods. The effect of varying the diameters of the nanospheres forming the dimer, on the electromagnetic field enhancement, was also studied.

Indium gallium zinc oxide deposited by pulsed laser deposition at room temperature was used as a channel layer to fabricate transparent thin film transistors with good electrical characteristics: field effect mobility of 11cm2V−1s−1 and subthreshold voltage swing of 0.20V∕decade. By varying the oxygen partial pressure during deposition the conductivity of the channel was controlled to give a low off-current of ∼10pA and a drain current on/off ratio of ∼5×107. Changing the channel layer thickness was a viable way to vary the threshold voltage. The effect of the gate dielectric on the electrical behavior was also explored.

This study involves two aspects of our investigations of plasmonics-active systems: (i) theoretical and simulation studies and (ii) experimental fabrication of plasmonics-active nanostructures. Two types of nanostructures are selected as the model systems for their unique plasmonics properties: (1) nanoparticles and (2) nanowires on substrate. Special focus is devoted to regions where the electromagnetic field is strongly concentrated by the metallic nanostructures or between nanostructures. The theoretical investigations deal with dimers of nanoparticles and nanoshells using a semi-analytical method based on a multipole expansion (ME) and the finite-element method (FEM) in order to determine the electromagnetic enhancement, especially at the interface areas of two adjacent nanoparticles. The experimental study involves the design of plasmonics-active nanowire arrays on substrates that can provide efficient electromagnetic enhancement in regions around and between the nanostructures. Fabrication of these nanowire structures over large chip-scale areas (from a few millimeters to a few centimeters) as well as FDTD simulations to estimate the EM fields between the nanowires are described. The application of these nanowire chips using surface-enhanced Raman scattering (SERS) for detection of chemicals and labeled DNA molecules is described to illustrate the potential of the plasmonics chips for sensing.