No abstract

The mixing roughness information depth model is frequently used for the quantification of sputter depth profiles. In general, the solution of the convolution integral for any kind of in‐depth distributions is achieved by numerical methods. For a thin delta layer, an analytical depth resolution function is presented, which enables a simple and user‐friendly quantification of measured delta layer profiles in AES, XPS and SIMS. Copyright © 2013 John Wiley & Sons, Ltd.

Atomic mixing is an important parameter in the quantitative description of sputter depth profiles by the mixing-roughnessinformation depth model. By changing the atomic mixing length from zero to a stationary state value, it is possible to simulate the transient zone at the beginning of sputter depth profiling with noble gas ions, which is important for shallow depth profiles. Accordingly, the depth profile is gradually broadened and the depth resolution value increases with sputtered depth. Applications of changing the atomic mixing length in the mixing-roughness-information depth model are shown to yield excellent fits for measured AES depth profiles of N + implantation in Co films.

No abstract

No abstract