Influence of non-Gaussian roughness on sputter depth profiles

Liu, Y.; Jian, Wei; Wang, J. Y.; Hofmann, S.; Kovač, Janez

doi:10.1016/j.apsusc.2013.03.114

Cited by 17 publications

(13 citation statements)

References 16 publications

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“…[1,12,24,[30][31][32]). Although the MRI model was originally developed to quantitatively evaluate depth profiles obtained by sputtering in combination with AES and XPS, one of its first successful applications was the fairly accurate fitting of a SIMS measurement of an AlAs monolayer depth profile in GaAs [27] (see also Fig.…”

Section: The Analytical Depth Resolution Function Of the Mri Modelmentioning

confidence: 97%

Analytical and numerical depth resolution functions in sputter profiling

Hofmann

Liu

Wang

et al. 2014

Applied Surface Science

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Section: The Analytical Depth Resolution Function Of the Mri Modelmentioning

confidence: 97%

Analytical and numerical depth resolution functions in sputter profiling

Hofmann

Liu

Wang

et al. 2014

Applied Surface Science

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“…For example, depth‐dependent or concentration‐dependent sputtering rates (i.e. preferential sputtering) can easily be taken into account as well as local‐composition‐dependent or depth‐dependent changes of atomic mixing, information depth, and roughness . The influence of electron backscattering on AES depth profiles of single layer and multilayers can also be implemented into the MRI model …”

Section: Present State‐of‐the‐ Artmentioning

confidence: 99%

Sputter depth profiling: past, present, and future

Hofmann

2014

Surface & Interface Analysis

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Sputter depth profiling is a direct method to obtain the in‐depth distribution of composition in thin films, at surfaces and at interfaces. It was developed in conjunction with the main methods of surface and interface analysis (AES, XPS, and SIMS). During the past decades, progress in depth profiling is characterized by the aim to obtain optimally resolved depth profiles. This is mainly achieved by experimentally identifying the decisive parameters for distortions of the original in‐depth distribution caused by sputtering and analysis. The physical origins of profile blurring are predicted by elaborate particle transport theories based on Sigmund's theory of sputtering. A simplified, user‐friendly model presentation of the result for depth profiling is its representation by convolution of the original in‐depth distribution with an appropriate depth resolution function (or response function). Great progress has been achieved by the development of the so‐called MRI model, based on the three physically well‐defined parameters atomic mixing, roughness and information depth, which describe the depth resolution function. The latter can be presented as a user‐friendly analytical expression for delta layers as well as for layers with a given thickness. Numerical solutions are necessary to include preferential sputtering and other depth or concentration‐dependent parameters. Whereas the instrumental development in AES is fairly stable, great progress is going on in XPS and particularly in SIMS and related techniques, enhanced by growing interest in three‐dimensional analysis of organic materials. At the horizon, there are more sophisticated models for quantification of transient states in shallow profiles and of sputter depth profiles generated by cluster ion bombardment of organics. Copyright © 2014 John Wiley & Sons, Ltd.

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“…After being calculated, the plastic deformation indexs ψ of wear interfaces were 8.397 at 15 min and 7.488 at 25 min. According to the judging criteria of plastic deformation of surface material, the plastic deformation indexs ψ were 8.397 and 7.488, which exceeded than 1. Therefore, the main wear mechanism was severe ploughing at 15 min and plastic deformation at 25 min, which were consistent to the research results of aforementioned experiments (see Figure , 4).…”

Section: Analyzing At Initial Wear Stage (0–25 Min)mentioning

confidence: 98%

Understanding Wear Interface Evolution to Overcome Friction and Restrain Wear of TiAl–10 wt%Ag Composite

Yang

Liu

et al. 2017

Adv Eng Mater

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The main objective of this paper is to study wear interface evolution for analyzing the of friction and wear property of TiAl-10 wt%Ag composite. The results show that the friction coefficient and wear rate of TiAl-10 wt%Ag rapidly reduce at 0-25 min and rhythmically fluctuate at 25-60 min. TiAl-10 wt%Ag at 60-240 min obtains low friction and less wear. It is concluded that silver with the low shearing strength of about 125 MPa shows the eminent plastic deformation on wear interface. It effectively reduces friction resistance and material loss, cause TiAl-10 wt%Ag to obtain low friction coefficient, and less wear rate at 0-25 min. Increased silver content, reduces oxide content, and varies wear mechanisms cause the repeating variation of friction resistance and material loss, which results in the rhythmical fluctuation of friction coefficient and wear rate at 25-60 min. High silver contents exist on smooth wear interfaces, exhibit the eminent plastic deformation to lower friction and reduce wear. TiAl-10 wt%Ag obtains the low friction and less wear at 60-240 min.

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Influence of non-Gaussian roughness on sputter depth profiles

Cited by 17 publications

References 16 publications

Analytical and numerical depth resolution functions in sputter profiling

Analytical and numerical depth resolution functions in sputter profiling

Sputter depth profiling: past, present, and future

Understanding Wear Interface Evolution to Overcome Friction and Restrain Wear of TiAl–10 wt%Ag Composite

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