Anisotropic in-plane strain can be induced in (Pb,Sr)TiO3 (PST) thin film by using orthorhombic NdGaO3 (110) as a substrate. High-resolution x-ray diffraction was used to measure the strain of the PST thin film. A rocking curve with full width at half maximum of ∼0.04° illustrated that the film had nearly perfect single-crystalline quality. Reciprocal space maps around the (001), (103), and (013) reflections of the PST film revealed anisotropic in-plane strain of 485 ppm along [100] and 26 ppm along [010], respectively. Coplanar capacitance measurements also showed systematic changes in the dielectric constant and tunability due to strain; about a 15% difference in tunability at surface field of 50 kV/cm and a 20% difference in the zero-field dielectric constant were observed along [100] and [010], respectively.

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The solute-drag-dependent growth kinetics of core-shell-structured grains in rare-earth-doped BaTiO3 ceramics was studied based on an analytical description of the diffusion of rare-earth atoms doped. Dependence of the sizes of grain core and shell on the sintering conditions, dopant content, and starting powder size was quantitatively revealed. The effective dielectric constant of the ceramics was calculated in terms of the relative contents of the ferroelectric core and paraelectric shell. The calculations are in good agreement with the experimental observations.

Bi Sc O 3 – Pb Ti O 3 thin film was hydrothermally deposited on Nb-doped SrTiO3 [100] single crystal substrate at 180°C with a large thickness of 3.1μm. The x-ray diffraction and high resolution transmission electron microscopy confirmed the epitaxial growth relationship between the BSPT thin film and Nb-STO substrate. Single-crystal-like polarization hysteresis loops were observed, with the remanent polarization of 30μC∕cm2. Piezoelectric force microscopy revealed a single +c domain structure of the film, while exceptional linear piezoelectric response was observed with the effective piezoelectric constant d33* of 65pm∕V. The temperature dependence of the effective d33* indicated that this film exhibited a high temperature stability.

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