Epitaxial nature and anisotropic dielectric properties of (Pb,Sr)TiO3 thin films on NdGaO3 substrates

Abstract

Articles you may be interested inEffect of stoichiometry on the dielectric properties and soft mode behavior of strained epitaxial SrTiO3 thin films on DyScO3 substrates Appl. Phys. Lett. 102, 082905 (2013); 10.1063/1.4793649In-plane dielectric properties of epitaxial Ba0.7Sr0.3TiO3 thin films grown on GaAs for tunable device application

Effect of in-plane shear strain on phase states and dielectric properties of epitaxial ferroelectric thin films

“…The recent experimental studies of epitaxial films grown on orthorhombic substrates have shown that the substrate-induced strain anisotropy may significantly affect the dielectric properties of the ferroelectric layer. 7,26,27 This fact caused the development of thermodynamic theory of ferroelectric thin films with the anisotropic tensile/compressive strains and the shear deformation acting in the film plane. 19 Further theoretical studies were devoted to epitaxial films under anisotropic biaxial strains without the shear component.…”

The effect of Mg doping on the dielectric and tunable properties of Pb0.3Sr0.7TiO3 thin films prepared by sol–gel method

“…The effects of buffer layers [5], epitaxial or oriented growth [6,7], compositionally graded films [8] and multilayered films structures [9] on the dielectric and ferroelectric properties of PST films were investigated. Besides, it has been identified that proper acceptor doping is another effective way to optimize the ferroelectric and dielectric properties of perovskite ferroelectric films.…”

Dielectric and tunable properties of Pb0.25BaxSr0.75−xTiO3 thin films fabricated by a modified sol–gel method

“…To the present, PST thin films have been prepared by a variety of techniques involving pulsed laser deposition [8,9], radio frequency magnetron sputtering [7], metal-organic deposition [10] and sol-gel process [2,4,5,[11][12][13]. Among these techniques, the sol-gel technique offers significant advantages over other film fabrication methods such as purity, better homogeneity, precision stoichiometry control, substrates with non-planer shapes, large area deposition and ease of doping.…”