We report for the first time a Nd:LuVO 4 laser operating in a continuous wave (CW) on the true three-level laser at 880 nm, based on the 4 F 3/2 -4 I 9/2 transition. CW 345 mW output power at 880 nm is obtained under 18.2 W of incident pump power. Moreover, the intracavity second-harmonic generation (SHG) has also been achieved with a blue power of 37 mW by using a LiB 3 O 5 (LBO) nonlinear crystal. Output powers at 880 and 440 nm versus pump power at 809 nm
We report for the first time a Nd:GdVO4 laser operating in a continuous wave (CW) on the quasi-three-level laser at 893 nm, based on the 4F3/2 – 4I9/2 transition, generally used for a 912 nm emission. The use of a pump module with 16 passes through the crystal allowed the realization of a Nd:GdVO4 thin-disk laser with 157 mW of CW output power at 893 nm. Moreover, intracavity second-harmonic generation (SHG) has also been achieved with a power of 23 mW at 447 nm by using a BiB3O6 (BiBO) nonlinear crystal.
We report a coherent blue-green radiation at 497 nm by self-sum-frequency generation of the 936 and 1060 nm laser-lines of the Nd:YCa4O(BO3)3 (Nd:YCOB) crystal. With a diode pump power of 14.3 W, the maximum blue-green output power of 75 mW is obtained. The beam quality M2 value is 1.22 in both horizontal and vertical dimensions. The output power stability over 30 min is better than 4.1%. To the best of our knowledge, this is first work on self-sum-frequency generation of a diode pumped Nd:YCOB laser at 497 nm.
We report what is believed to be the first demonstration of diode-pumped continuous-wave (CW) thin-disk Yb3+-doped Gd2SiO5 (Yb:GSO) laser at 1048 nm. With a 3.8% output coupler, the maximum output power is 1.38 W under a pump power of 17.8 W. Moreover, intracavity second-harmonic generation (SHG) has also been achieved with a power of 337 mW at 524 nm by using a LiB3O5 (LBO) nonlinear crystal. At the output power level of 337 mW, the green power stability is better than 5% and the ellipticity of spot is 0.97.
We describe the output performances of the 942 nm 4 F 3/2 → 4 I 9/2 transition in Nd:GSAG under diode-laser pumping. An end-pumped Nd:GSAG crystal yielded 3.7 W of continuous-wave output power for 17.8 W of absorbed pump power. The slope efficiency with respect to the absorbed pump power was 23.4%. Furthermore, with 17.8 W of diode pump power and the frequency-doubling crystal LiB 3 O 5 (LBO), a maximum output power of 572 mW in the blue spectral range at 471 nm has been achieved, corresponding to an optical-tooptical conversion efficiency of 3.2%; the output power stability over 4 h is better than 4.1%. Output powers at 942 and 471 nm versus pump power at 808 nm
We describe the output performances of the 1.35 μm 4 F 3/2 → 4 I 13/2 transition in Nd-doped Sr3Ga2Ge4O14 (SGG) under in-band pumping with diode lasers at the 879 nm wavelength, directly into the 4 F 3/2 emitting level. An end-pumped Nd:SGG crystal yielded 7.1 W of continuous-wave (CW) output power for 17.7 W of absorbed pump power. The slope efficiency with respect to the absorbed pump power was 47.7%. To the best of our knowledge this is the first demonstration of such a laser system. Comparative results obtained for the pump with diode laser at 806 nm, into the highly-absorbing 4 F 5/2 level, are given in order to prove the advantages of the in-band pumping. Output power at 1.35 μm versus the absorbed pump power
A dual-wavelength continuous wave (CW) diodepumped Nd:YAB laser that generates simultaneous laser action at the wavelengths 1062 and 1338 nm is demonstrated. A total output power of 278 mW at the two fundamental wavelengths was achieved at the absorbed pump power of 9.8 W. Furthermore, generation of yellow laser light at 592 nm produced by Type-I self-sum-frequency-mixing of both fundamental waves is observed under non-optimal phase matching conditions. With a diode pump power of 9.8 W, TEM00 mode yellow laser at 592 nm of 37 mW is obtained. The power stability in 4 h is better than 3.3%. Dependence of the output power at 592 nm on absorbed pump power
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