Efficient 1.35 µm laser emission of Nd-doped Sr3Ga2Ge4O14 under in-band pumping with diode lasers

Abstract

We describe the output performances of the 1.35 μm 4 F 3/2 → 4 I 13/2 transition in Nd-doped Sr3Ga2Ge4O14 (SGG) under in-band pumping with diode lasers at the 879 nm wavelength, directly into the 4 F 3/2 emitting level. An end-pumped Nd:SGG crystal yielded 7.1 W of continuous-wave (CW) output power for 17.7 W of absorbed pump power. The slope efficiency with respect to the absorbed pump power was 47.7%. To the best of our knowledge this is the first demonstration of such a laser system. Comparative results obtained for the pump with diode laser at 806 nm, into the highly-absorbing 4 F 5/2 level, are given in order to prove the advantages of the in-band pumping. Output power at 1.35 μm versus the absorbed pump power

Structural and Vibrational Properties of the Ordered Y2CaGe4O12 Germanate: A Periodic Ab Initio Study

“…High-temperature processing also adds considerable costs to manufacturing and increasing the energy input necessary for the process. However, highly desirable new preparation methods have been successfully elaborated at lower temperatures. − Besides the common lanthanide-doped gallogermanates M 3 Ga 2 Ge 3 O 12 − and M 3 Ga 2 Ge 4 O 14 , − M = Ca, Sr; Ln = La–Lu, Y, binary and ternary germanate crystals and nanosized crystalline compounds, such as Ca 2 GeO 4 :Ln 3+ , − In 2 Ge 2 O 7 :Ln 3+ , − LaAlGe 2 O 7 :Ln 3+ , , Y 2 CaGe 3 O 10 :Ln 3+ , and Y 2 MGe 4 O 12 :Ln 3+ , Ln = Pr–Yb, M = Ca, Mn, − have been reported for their applications in LED technologies, optical devices, and upconverting sensors. The cyclotetragermanate family Ln 2 MGe 4 O 12 (Ln = lanthanide, Y) includes compounds with two different structural types: (i) triclinic, Ln 2 CuGe 4 O 12 , space group P 1̅, Z = 1; (ii) tetragonal, Ln 2 M Ge 4 O 12 , M = Ca, Mn, Zn, space group P 4/ nbm , Z = 2 …”

High efficiency 1341 nm Nd:GdVO4 bounce laser in-band pumped at 879 nm

“…It also can be used to generate red and blue lasers by nonlinear optical frequency conversion and as the pumping source for special lasers. Lasers around 1.3 µm can be basically obtained from 4 F 3/2 -4 I 13/2 transition of Nd 3+ [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21]. A well known representa tive is Nd:YVO 4 , which has been widely used both in research and commercial devices.…”

Effects of Growth Parameters on the Structural and Optical Properties of InP/InGaP Quantum Structures for 808-nm-Wavelength Emissions

“…[1][2][3][4][5] Among the various kinds of quantum structures, InAlAs/AlGaAs quantum structures have emerged as excellent candidates as active layers for the laser diodes with 808-nm-wavelength emissions. 6 The inclusion of 40% of the AlGaAs active layer in the InAlAs/AlGaAs quantum structures has inherent problems, however, due to its complicated growth process and surface oxidation.…”