No abstract

The zero-bias capacitance of a Schottky diode formed on a nominally undoped In0.08Ga0.92As0.51P0.49 is found to be persistently increased after a high current injection at low temperatures. The increment of capacitance grows as the amplitude or duration of the current pulse is increased. When a high current is injected at low temperatures before the deep level transient spectroscopy measurements, the concentration of the so-called ET1 defects is decreased. It is discussed that all these results are related to the hole injection from the Schottky contact and the charge-state controlled stability of the ET1 defects.