AlGaN/GaN Schottky Barrier Diodes Employing TaN Schottky Contact

Seok, Ogyun; Ahn, Woo-Hyun; Kim, Y.; Ha, Min−Woo; Han, Min−Koo

doi:10.7567/ssdm.2012.ps-6-6

Search citation statements

Order By: Relevance

Paper Sections

Select...

Methods1

Citation Types

Supporting

Mentioning

Contrasting

Publication Types

Select...

Other1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

(1 citation statement)

References 3 publications

(3 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Next, the interfacial elemental distribution and structural changes of reported Ni contacts on n-type AlGaN/GaN structure [77,203]. A higher ideality factor, n > 1 implies that the current transport mechanism is not purely dominated by thermionic emission instead a trap-assisted tunneling mechanism might be present at the metal/semiconductor interface [204].…”

Section: Methodsmentioning

confidence: 99%

Fabrication and characterization of Algan/Gan high electron mobility transistors on silicon

Tham¹

View full text Add to dashboard Cite

"Moore's Law" states that the number of transistors in an integrated circuit will double approximately every two years. True to this observation, the number of transistors per Si IC indeed has doubled every 18 months since the 1970s. In accordance with the scaling trend predicted in Moore's Law, not only is the packing density of transistors increased but devices' performance are significantly improved as well. However as the size of transistors continuously shrinks, several issues such as the fundamental limitation of Si, quantum

show abstract

Section: Methodsmentioning

confidence: 99%

Fabrication and characterization of Algan/Gan high electron mobility transistors on silicon

Tham¹

View full text Add to dashboard Cite

show abstract

AlGaN/GaN Schottky Barrier Diodes Employing TaN Schottky Contact

Cited by 1 publication

References 3 publications

Fabrication and characterization of Algan/Gan high electron mobility transistors on silicon

Fabrication and characterization of Algan/Gan high electron mobility transistors on silicon

Contact Info

Product

Resources

About