We report the first microwave AlAs/GaAs tunnel emitter bipolar transistor utilizing nonequilibrium electron transport in the base. At an emitter current density of 1×105 A cm−2, current gain of greater than unity is measured up to a frequency of 40 GHz. dc current gains of 82 and 53 are measured for devices with emitter stripe widths of 9 and 1.5 μm, respectively. Enhanced device scaling is made possible with the extremely high velocity in the thin base region.
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We introduce a semiconductor distributed feedback (DFB) in which the grating is fabricated out of quantum well (QW) or superlattice multilayers. This approach provides a very simple and effective scheme for achieving gain (loss)-coupled DFB lasers. The present idea was successfully demonstrated with a 1.55-μm wavelength 6-QW In0.6Ga0.4As (5 nm)/InGaAsP (band-gap wavelength=1.25 μm, 18.6 nm) separate confinement heterostructure DFB laser utilizing only a 2-QW In0.62Ga0.38As (4 nm)/InP (9.3 nm) as the grating.
By controlling the thickness of the grating depth with chemical beam epitaxy (CBE) growth time, we report in this letter the design and performance of an integrated tunable detector. A carefully designed tunable active filter, which allows only one below threshold Fabry–Perot mode for operation, is integrated with a waveguide detector. The full tuning range of this kind of tunable device can now be utilized for system applications.
Solid-source molecular beam epitaxy with substrate temperature modulation has produced periodic index separate confinement heterostructure InGaAs/AlGaAs quantum well lasers with greatly improved performance. These lasers in a broad area geometry are under room-temperature continuous wave operation and have low threshold current density of 300 A/cm2, high internal quantum efficiency of 91%, low internal waveguide loss of 2.2 cm−1, a reduced transverse beam divergence of 30°, and a high characteristic temperature of 187 K.
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