InGaAs/InGaAsP integrated tunable detector grown by chemical beam epitaxy

Choa, Fow-Sen; Tsang, W. T.; Logan, R. A.; Gnall, R. P.; Koch, Thomas; Burrus, C.A.; Wu, M.C.; Chen, Y. K.; Kapre, R.

doi:10.1063/1.110678

Cited by 13 publications

(1 citation statement)

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“…Applied to III–V semiconductor deposition, CBE demonstrated a wide range of advantages − including easy deposition and doping of complex materials from various precursors, high composition and thickness uniformity even on large substrates, high precursor conversion rate, high growth rates, high reproducibility, compatibility with UHV characterization techniques, compatibility with laser beam structuring, and surface selective growth. Despite these advantages and the fabrication of devices, − the expected breakthroughs did not take place and industrial CBE equipment disappeared from the market. Today, III–V semiconductor synthesis with CBE is mainly performed for nanowires , or quantum dot deposition. , In parallel to the main work on III–V semiconductors materials, which require a particular chemistry based mainly on alkyl compounds and hydrides, attempts were made to extend the technology to organometallic precursors for other material deposition.…”

Section: Introductionmentioning

confidence: 99%

Geometry of Chemical Beam Vapor Deposition System for Efficient Combinatorial Investigations of Thin Oxide Films: Deposited Film Properties versus Precursor Flow Simulations

Wagner¹,

Sandu²,

Harada³

et al. 2016

ACS Comb. Sci.

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An innovative deposition system has been developed to construct complex material thin films from single-element precursors by chemical beam vapor deposition (CBVD). It relies on well distributed punctual sources that emit individually controlled precursor beams toward the substrate under high vacuum conditions combined with well designed cryo-panel surfaces that avoid secondary precursor sources. In this configuration the impinging flows of all precursors can be calculated at any substrate point considering the controlled angular distribution of the emitted beams and the ballistic trajectory of the molecules. The flow simulation is described in details. The major advantage of the deposition system is its ability to switch between several possible controlled combinatorial configurations, in which the substrate is exposed to a wide range of flow compositions from the different precursors, and a uniform configuration, in which the substrate is exposed to a homogeneous flow, even on large substrates, with high precursor use efficiency. Agreement between calculations and depositions carried out in various system configurations and for single, binary, or ternary oxides in mass transfer limited regime confirms that the distribution of incoming precursors on the substrate follows the theoretical models. Additionally, for some selected precursors and in some selected conditions, almost 100% of the precursor impinging on the substrate is incorporated to the deposit. The results of this work confirm the potentialities of CBVD both as a research tool to investigate efficiently deposition processes and as a fabrication tool to deposit on large surfaces.

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