Optical absorption bands of electrochemically-colored films of amorphous WO3, MoO3 and Mo
c
W1-c
O3 were investigated. The peak photon energy of the bands depends not only on the amount of injected charges but also on the Mo content. In the WO3 films, the absorption band originates from the intervalence trasfer of electrons. In MoO3 and mixed films, however, the absorption bands are considered to consist of two different components. The first is the intervalence trasfer band and the second is a component of absorption at higher energies. The second component is considered to be related to Mo atoms. The area under the absorption curve increases linearly with increasing density of injected charges in the WO3 film. In the film with large c, the absorption tends to saturate.
Abstraet-Long-term reliability for a p+ poly gate MOS structure was tested under low electric field bias temperature (BT) stress in comparison with an n+ poly gate. A significant increase in interface state density was observed for the pf poly gate MOS structure under positive bias conditions. This phenomenon was not observed in the n + poly gate case. The mechanism for this interface state increase was investigated in detail. Several possible causes, such as mobile ions, excess boron concentration in the gate oxide, electron injection from the substrate, impact ionization in the gate oxide, and bole injection from the gate electrode, were considered. All of the causes, except hole injection, were obviated by experiments. Although hole injection current was too small to be detected, hole injection from the p+ poly gate is a possible cause, which could explain the interface state generation under positive-bias temperature test. For applying a p+ poly gate to CMOS structures, care should be taken when positive bias is applied to the gate electrode.
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