The purpose of this paper is to explore three-dimensional magnetic recording as a next generation recording technology. To defer the superparamagnetic limit in magnetic recording substantially beyond the 1Tbit∕in.2 mark, it is proposed to stack magnetic bits in a third (vertical) dimension. The vertical stacking underlies the concept of three-dimensional (3D) magnetic memory and recording—the primary subject of this paper. A clear distinction between absolute 3D memory and its trivial multilevel implementation is drawn. The paper focuses on the study of the media design and write and read processes. To minimize the intersymbol interference and improve stability, it is proposed to pattern the recording media in all three dimensions. Basic Co∕Pd-based 3D recording media necessary for this study are fabricated using cosputter deposition. Focused-ion-beam-based fabrication is used to pattern the recording media into nanoscale bit cells. The physics of 3D magnetic recording is also investigated theoretically with Landau-Lifshits-Gilbert-based micromagnetic modeling. The ultimate goal of this paper is to help understand the physics of 3D and multilevel magnetic recordings and trigger wide interest in the studied concept.

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We have used a high performance (less than 0.05 dB insertion loss, greater than 30 dB isolation) high-Tc superconductor based micro electromechanical (MEM) switch to insert a shunt microstrip resonator into a microstrip transmission line thus forming a ‘T’-resonator structure. This allows the insertion of a series of notches and peaks (depending on termination of the shunt line and the harmonic in use) into the transmission line's transfer function thus forming a rudimentary switched filter. The ‘T’-resonator is designed for a resonant frequency of 3.5 GHz and is implemented using high-Tc YBa2Cu3O7, BaTiO3 is used as a dielectric patch underneath a suspended gold membrane. The design, fabrication, testing and most recent results are presented in this paper.

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