Focused-ion-beam-fabricated nanoscale magnetoresistive ballistic sensors

Khizroev, Sakhrat; Hijazi, Y.; Chomko, R.; Mukherjee, Sankha; Chantrell, R.W.; Wu, Xiao-Chuan; Carley, R.; Litvinov, D.

doi:10.1063/1.1853518

Cited by 35 publications

(18 citation statements)

References 10 publications

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“…There are a pair of unpublished reports by Mukherjee et al where a 20 per cent effect in a FIB cut 40 × 10 × 10 nm 3 Ni 80 Fe 20 junction is claimed [390], and atomic scale modelling of the magnetic configuration of such a structure is described [391]. A report of an MR of 18 per cent in a similar 35 nm device was published recently [392]. Ni nanocontacts were prepared by Ohsawa using a combination of FIB patterning followed by ion milling combined with in situ magnetoresistance measurements [393].…”

Section: Experimental Explorationmentioning

confidence: 98%

Spin-polarised currents and magnetic domain walls

Marrows

2005

Advances in Physics

216

163

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Electrical currents flowing in ferromagnetic materials are spinpolarised as a result of the spin-dependent band structure. When the spatial direction of the polarisation changes, in a domain structure, the electrons must somehow accommodate the necessary change in direction of their spin angular momentum as they pass through the wall. Reflection, scattering, and a transfer of angular momentum to the lattice are all possible outcomes, depending on the circumstances. This gives rise to a variety of different physical effects, most importantly a contribution to the electrical resistance caused by the wall, and a motion of the wall driven by the spin-polarised current.Historical and recent research on these topics is reviewed. * Phone: +44(0)113 3433780

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Section: Experimental Explorationmentioning

confidence: 98%

Spin-polarised currents and magnetic domain walls

Marrows

2005

Advances in Physics

216

163

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“…͓DOI: 10.1063/1.3075061͔ Patterned magnetic nanostructures with perpendicular anisotropy have potential applications in a host of emerging technologies, such as bit patterned media, 1,2 percolated perpendicular media, 3 spintronics, 4 magnetic random access memory, 5 and magnetic sensors. 6 To realize the full potential of these technologies, there are still key issues to be addressed such as the following: ͑1͒ simple and cost-effective fabrication process to achieve magnetic nanostructures over large areas and ͑2͒ understanding and control of magnetization reversal process in elements whose sizes are approaching the ferromagnetic exchange length. Among the many efforts to fabricate patterned magnetic nanostructures, a simple way is to deposit materials on prepatterned substrates [1][2][3]7 that, e.g., have been prepared by electron-beam lithography, 1,2 nanoimprint lithography, 8 extreme ultraviolet lithography, 7 and diblock copolymer templates.…”

mentioning

confidence: 99%

Controlling magnetization reversal in Co/Pt nanostructures with perpendicular anisotropy

Rahman¹,

Dumas²,

Eibagi³

et al. 2009

Applied Physics Letters

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We demonstrate a simple method to tailor the magnetization reversal mechanisms of Co/Pt multilayers by depositing them onto large area nanoporous anodized alumina (AAO) with various aspect ratios, A = pore depth/diameter. Magnetization reversal of composite (Co/Pt)/AAO films with large A is governed by strong domain-wall pinning which gradually transforms into a rotation-dominated reversal for samples with smaller A, as investigated by a first-order reversal curve method in conjunction with analysis of the angular dependent switching fields. The change of the magnetization reversal mode is attributed to topographical changes induced by the aspect ratio of the AAO templates.

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“…Ebels et al 15 as well as Khizroev et al 16 and Lepedatu and Xu 5 have measured the extra electrical resistance R dw caused by a wall, in nanowires. The Ebels cobalt sample had a circular cross section with t = w as the diameter.…”

Section: Introductionmentioning

confidence: 99%

Analysis of measured transport properties of domain walls in magnetic nanowires and films

Berger

2006

Phys. Rev. B

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Existing data for soft magnetic materials of critical current for domain-wall motion, wall speed driven by a magnetic field, and wall electrical resistance show that all three observable properties are related through a single parameter: the wall mobility . The reciprocal of represents the strength of viscous friction between domain wall and conduction-electron gas. And is a function of the wall width, which depends in turn on the aspect ratio t / w, where t and w are the thickness and width of the sample. Over four orders of magnitude of , the data for nanowires show ϰ ͑t / w͒ −2.2 . This dependence is in approximate agreement with the prediction of the 1984 Berger theory based on s-d exchange. On the other hand, it is inconsistent with the prediction of the

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Focused-ion-beam-fabricated nanoscale magnetoresistive ballistic sensors

Cited by 35 publications

References 10 publications

Spin-polarised currents and magnetic domain walls

Spin-polarised currents and magnetic domain walls

Controlling magnetization reversal in Co/Pt nanostructures with perpendicular anisotropy

Analysis of measured transport properties of domain walls in magnetic nanowires and films

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