Nitrogen ions ( N2
+) with 62 keV have been implanted into 100-nm-thick Ti films evaporated on thermally cleaned NaCl substrates. Unimplanted and N-implanted Ti films have been examined by transmission electron microscopy, Rutherford backscattering spectrometry and elastic recoil detection analysis. The analysis has provided evidence that N-implantation results in the epitaxial formation of NaCl-type TiN
y
and simultaneously induces the release of H from evaporated-Ti films containing TiH
x
. The nitriding of evaporated-Ti films is mainly divided into two elemental processes. One is accompanied by the hcp-fcc transformation and the other is not. The formation mechanism for TiN
y
is discussed.
Interdiffusion and interfacial reaction between a sputter-deposited YBa2Cu3Ox thin film and substrates (MgO, sapphire, quartz, and Si) have been investigated by 2.7 MeV 4He+ Rutherford backscattering spectrometry. The diffusivities of Cu in the substrates and of the substrate elements (Mg, Al, and Si) in the Y-Ba-Cu-O thin films have been determined over the annealing temperature range from 876 to 1226 K in an oxygen atmosphere. Among three metallic elements of Y, Ba, and Cu, Cu diffuses the fastest into the substrates. Copper silicide is observed in the interfacial region between the film and the Si substrate. Among these substrates, MgO is suggested to be the most stable on annealing.
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