It is shown that exchange interactions in the two-dimensional electron gas in quantum wells could cause observable effects on subband energies and intersubband transition energies. In the case of doped quantum wells, the intrasubband exchange interaction can produce an energy shift which is substantially larger than the direct Coulomb energy shift. Theoretical estimates of such shifts are compared with experimental measurements of the infrared photoconductivity of multiple quantum well AlGaAs/GaAs structures with wells doped at about 1018 cm−3.
Thin films of InAs1−xSbx (0<x<1) have been deposited on GaAs and InSb substrates in the temperature range 300–400 °C using molecular beam epitaxy. The solid composition was found to be quite sensitive to the Sb flux and less sensitive to As flux. InSb-InAsSb superlattice structures have also been grown and studied. Both the ternary alloy and the superlattice structures can be potential material systems for detectors covering the 8–12-μ range.
Extended long wavelength infrared detection with a miniband-type AlGaAs/GaAs superlattice structure is reported. The experimental response band of the detector is peaked near 14.5 μm in good agreement with the theoretical response, provided that electron-electron interactions are taken into account. The detector operates at a low bias voltage, which could lead to important advantages in application to IR focal plane arrays.
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