Strained-layer quantum-well injection laser

Laidig, W. D.; Caldwell, P. J.; Lin, Y. F.; Peng, C. K.

doi:10.1063/1.94866

Cited by 115 publications

(12 citation statements)

References 7 publications

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“…ceeds by the deposition of individual layers of Ill-V compounds have also been grown using atoms. GaAs, for example, is grown by first de-ALE by Nishizawa et al [3] and our group [4,5]. positing an atomic layer of Ga and then an atomic…”

Section: -13-imentioning

confidence: 99%

Defect Reduction in Epitaxial Growth Using Superlattice Buffer Layers

Bedair¹

1988

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The growth of GaAs. InAs and In ,(Li ,As (0 < 0.43) b atomic layer epitaxy (ALE) is dcecrihed. The gro. th rate bv ALE is found to be independent of the column III flux, ALI: GaAs. grown between 450 and 630*C. has been characterized b% photoluminescence and Hall measurements. Initial result, Indicate that ALE gives improved incorporation and uniformity in the gro, th of InGaAs compared to conventional MOCVI) and viii he a suitable technique for growing ternary and quaternary layer, over large areas. 'k 4. 242 IEl-ELIECIRON DEVICE LITERS. VOL MI)I.A. NO 5. M.AY Q97 interfaces, which will result in both speclral hroadening anid REFFIrfI'N(TS shift of the peak position, may be insignificant, since no 116 C. (sbhourn.

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Section: -13-imentioning

confidence: 99%

Defect Reduction in Epitaxial Growth Using Superlattice Buffer Layers

Bedair¹

1988

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“…Of particular importance is pseudomorphically strained quantum wells such as InGaAs grown on GaAs substrates [1,2]. Due to the lattice constant difference between InGaAs and GaAs, only a certain thickness of InGaAs layers may be deposited on GaAs crystals before the layer starts to relax with misfit dislocations.…”

Section: Introductionmentioning

confidence: 99%

Growth of highly strained InGaAs quantum wells on GaAs substrates—effect of growth rate

Tan

Lever

Jagadish

2005

Journal of Crystal Growth

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“…Since the advance in epitaxial growth, it becomes possible to obtain a latticemismatched heterostructure without dislocation generated at interface if the thickness of constituent materials are thin enough, such high quality heterostructure called as "strained-layer structure", such as InGaAs/GaAs, InP/InGaAs... etc. Recently, these strained layer structures have wide applications in lasers [1][2][3][4], photodetector [5] and transistor [6,7], due to their flexibilities in the choice of mismatched materials.…”

Section: Introductionmentioning

confidence: 99%

Biaxial Strain Effects on Optical Characteristics of Quantum Well Lasers

Hsu

Lee

Yarn

2000

Active and Passive Electronic Components

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The effects of biaxial strain produced by the lattice mismatch of constituent materials on the optical properties of strained In_xGaxAsyt'l _y/In] _xGaxAs quantum well lasers are investigated.The optical gain and refractive index change of a biaxially stressed quantum well lasers are studied theoretically using the multiband effective mass equation (i.e., :. t7 method), deformation potential theory and Fermi-Golden rule, band mixing effect is retained in the calculations. It is found that the biaxial strain would change the subband structures and optical properties of quantum well lasers, we found the gain of TE mode increases with increasing compressive strain, while the gain of TM mode increases with increasing tensile strain, these will be benefited for reducing the threshold current depending on whether the quantum well lasers are operating in TE or TM mode. On the other hand, the refractive index change in the active region near the TE(TM) mode peak gain becomes more negative when a biaxial compressive(tensile) strain is applied, it leads to the conclusion that the strain weakens the optical confinement, the temperature dependence of gain also becomes stronger when there is strain. Finally, we also found the minimum peak gain occurs when a small tensile strain is applied, but no strain.

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Strained-layer quantum-well injection laser

Abstract: Articles you may be interested inThe effects of strain on intrasubband scattering rates in InPbased strainedlayer quantumwell lasers J. Appl. Phys. 76, 7399 (1994); 10.1063/1.357965Free carrier absorption in quantum well structures for polar optical phonon scattering

Cited by 115 publications

References 7 publications

Defect Reduction in Epitaxial Growth Using Superlattice Buffer Layers

Defect Reduction in Epitaxial Growth Using Superlattice Buffer Layers

Growth of highly strained InGaAs quantum wells on GaAs substrates—effect of growth rate

Biaxial Strain Effects on Optical Characteristics of Quantum Well Lasers

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