9 The chemical vapor deposition of silicon from disilane under reduced pressure in an impinging jet reactor has been studied experimentally and simulated numerically by a 2D model. The measured deposition rate and profile have been compared to the results of the calculations performed with various hypotheses concerning both gas-phase and surface reactions. The influence of the number of species considered, of the kinetic rate constants, and of the models used for the reactive sticking coefficient of silane and disilane were investigated. Among the 17 species that may be present in the gas phase, a mechanism including 8 silicon-carrier species has been determined to represent satisfactorily the deposition rate and profile experimentally observed.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 132.170.49.187
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.