The microscopic defects and their effects on the electrical properties of phosphorus-doped ZnO films epitaxially grown on (0 0 0 1) sapphire and ZnO substrates by pulsed laser deposition are studied. While threading dislocations were observed only in heteroepitaxial films, a high density of partial dislocations associated with interstitial dislocation loops was observed in films grown on both substrates. These dislocations provide sinks to quench native donors and favour the injection of zinc vacancies to form acceptor-complex defects, thus leading to p-type conductivity.
Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.
Channel mobility is a major challenge for scaled silicon devices to meet the requirements of sub-45nm device geometries. Ge recently attracted considerable attention due to its high carrier mobility and excellent compatibility with high-k materials. 1 The development of Ge-based complimentary metal-oxide-semiconductor (CMOS) technology requires knowledge about the formation of local metal-semiconductor contact for which metal germanides will be used. Silicides have been extensively investigated, 2 however formation of germanides on single crystal Ge surface attracted less attention in the past. In this paper, we report the formation and microstructural evolution of epitaxial Co 5 Ge 7 phase on a single crystal Ge (001) surface by reactive deposition and solid state reaction in an in situ ultra high vacuum (UHV) transmission electron microscope (TEM). The microscope used for the present work is a modified JEOL-2010 TEM under UHV condition. Atomic Co flux was generated by the electron beam evaporation of high purity Co metal inside the TEM chamber. For reactive deposition, the Ge substrate was maintained at 350ºC. For solid state reaction, the deposition of Co on the Ge substrate was at a room temperature, and then the sample was in situ annealed at 125ºC, 225ºC, 300ºC and 350ºC, respectively. The morphology and structural evolutions of the epitaxial Co 5 Ge 7 phase during the reaction of Co with Ge surface in the two experiments were recorded in real-time.
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