No abstract

Vertically stacking layered metal halide perovskites (MHPs) have emerged as promising semiconductors for optoelectronic applications due to their low cost, tunable band gaps, and excellent stability and solution processability. However,...

No abstract

The rational control of the nucleation and growth kinetics to enable the high-quality growth of two-dimensional (2D) semiconducting metal chalcogenide heterostructures is a key step for the realization of their applications in nanoelectronics and optoelectronics. Here, we report a facile one-step chemical vapor deposition synthesis of 2D SnS–SnS2 heterostructures with controlled interfacial structures and stacking configurations via tuning S-precursor concentration during the growth. We demonstrate that the change of S-precursor concentration can drive growth transition from vertically stacking SnS2/SnS van der Waals heterostructures to SnS/SnS2 core–shell structures with both the lateral and vertical interfaces. Such a transition originates from a delicate competition between the nucleation of SnS and SnS2. High-resolution spectroscopy measurements and density functional theory (DFT) calculations reveal these SnS–SnS2 heterostructures with the type-II band alignment, and the measured valence and conduction band offsets are 1.33 and 0.34 eV for vertical SnS2/SnS heterostructures and 1.43 and 0.54 eV for SnS/SnS2 core–shell ones, respectively. This work provides an efficient strategy to control the growth of 2D SnS–SnS2 heterostructures for optoelectronic applications, such as photodetectors and solar cells.

The development of high-quality GaN-based heterojunctions breaks through the limitation of lattice mismatch, which is of particular importance for promoting their optoelectronic applications. Herein, we report an incommensurate heteroepitaxial growth...