There is accelerating interest in developing memory devices using antiferromagnetic (AFM) materials, motivated by the possibility for electrically controlling AFM order via spin-orbit torques, and its read-out via magnetoresistive effects. Recent studies have shown, however, that high current densities create non-magnetic contributions to resistive switching signals in AFM/heavy metal (AFM/HM) bilayers, complicating their interpretation. Here we introduce an experimental protocol to unambiguously distinguish current-induced magnetic and nonmagnetic switching signals in AFM/HM structures, and demonstrate it in IrMn3/Pt devices. A six-terminal double-cross device is constructed, with an IrMn3 pillar placed on one cross. The differential voltage is measured between the two crosses with and without IrMn3 after each switching attempt. For a wide range of current densities, reversible switching is observed only when write currents pass through the cross with the IrMn3 pillar, eliminating any possibility of non-magnetic switching artifacts. Micromagnetic simulations support our findings, indicating a complex domain-mediated switching process.
This chapter will review (p  n)-type transverse thermoelectrics (TTE). Starting with the device advantages of single-leg (p  n)-type TTE's over other thermoelectric paradigms, the theory of (p  n)-type TTE materials is given. Then, the figure of merit, transport equations, and thermoelectric tensors are derived for an anisotropic effective-mass model in bulk three-dimensional materials (3D), quasi-two-dimensional (2D), and quasi-onedimensional (1D) materials. This chapter concludes with a discussion of the cooling power for transverse thermoelectrics in terms of universal heat flux and electric field scales. The importance of anisotropic ambipolar conductivity for (p  n)-type TTEs highlights the need to explore noncubic, narrow-gap semiconductor or semimetallic candidate materials.
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