Room-temperature, bottom-gate, field-effect transistor characteristics of 2D ultrathin layer GaS and GaSe prepared from the bulk crystals using a micromechanical cleavage technique are reported. The transistors based on active GaS and GaSe ultrathin layers demonstrate typical n-and p-type conductance transistor operation along with a good ON/OFF ratio and electron differential mobility.
We study current versus voltage ͑I-V ͒ when tunneling into the edge of the fractional quantum Hall effect over a continuum of filling factors ͑n͒ from 1͞4 to 1. Our devices manifest the power law I-V behavior previously observed by Chang et al. at discrete fillings, but now with as many as six decades in current and over the whole range of filling factor suggesting the existence of a continuum of chiral Luttinger liquids. Surprisingly the exponent behaves approximately as 1͞n and does not exhibit the strong plateau features predicted in recent theoretical works based on the intermixing of copropagating and counterpropagating multiple edge modes. [S0031-9007(97)05218-6] 0031-9007͞98͞80(5)͞1062(4)$15.00
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