In the last few years, long-pulse H-mode plasma discharges (with small edge-localized modes and normalized beta, β N ~ 1) have been realized at the Experimental Advanced Superconducting Tokamak (EAST). This paper reports on high-β N (>1.5) discharges in the 2015 EAST campaign. The characteristics of these H-mode plasmas have been presented in a database. Analysis of the experimental limit of β N has revealed several main features of typical discharges. Firstly, efficient, stable high heating power is required. Secondly, control of impurity radiation (partly due to interaction between the plasma and the in-vessel components) is also a critical issue for the maintenance of high-β N discharges. In addition an internal transport barrier (ITB) has recently been observed in EAST, introducing further improvement in confinement surpassing H-mode plasmas. ITB dynamics is another key issue for high-β N plasmas in EAST. Each of these features is discussed in this paper. Study and improvement of these issues could be considered as the key to achieving long-pulse high-β N operation with EAST.
These results suggest that exercise does not worsen renal function and has renal-protective effects in this model of rats. Moreover, the antihypertensive therapy has additional renal-protective effects in this model of rats.
In this paper, the effect of low energy irradiation on mono-layer graphene was studied. Mono-layer graphene films were irradiated with B, N and F ions at different energy and fluence. X-ray photoelectron spectroscopy indicates that foreign ions implanted at ion energies below 35 eV could dope into the graphene lattice and form new chemical bonds with carbon atoms. The results of Raman measurement indicate that ion beam irradiation causes defects and disorder to the graphene crystal structure, and the level of defects increases with increasing of ion energy and fluence. Surface morphology images also prove that ion beam irradiation creates damages to graphene film. The experiment results suggest that low-energy irradiation with energies of about 30 eV and fluences up to 5·1014 cm−2 could realize small amount of doping, while introducing weak damage to graphene. Low energy ion beam irradiation, provides a promising approach for controlled doping of graphene
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