The surface-enhanced Raman spectroscopy (SERS) activity and the optical reflectance of a subwavelength gold nanograting fabricated entirely using top down technologies on silicon wafers are presented. The grating consists of 120 nm gold cladding on top of parallel silica nanowires constituting the grating's lines, with gaps between nanowires <10 nm wide at their narrowest point. The grating produces inordinately intense SERS and shows very strong polarization dependence. Reflectance measurements for the optimized grating indicate that (when p-polarization is used and at least one of the incident electric field components lies across the grating lines) the reflectance drops to <1% at resonance, indicating that essentially all of the radiant energy falling on the surface is coupled into the grating. The SERS intensity and the reflectance at resonance anticorrelate predicatively, suggesting that reflectance measurements can provide a nondestructive, wafer-level test of SERS efficacy. The SERS performance of the gratings is very uniform and reproducible. Extensive measurements on samples cut from both the same wafer and from different wafers, produce a SERS intensity distribution function that is similar to that obtained for ordinary Raman measurements carried out at multiple locations on a polished (100) silicon wafer.
Large-area, 100mm in diameter, aluminum nanowire grids with 40nm line/78nm space were fabricated with full-wafer immersion interference lithography. The aluminum nanowire grids with a 59nm half-pitch work as a highly efficient optical polarizer for deep ultraviolet wavelength down to ∼250nm. In addition, an extremely high contrast from 10 000:1 to 50 000:1 was achieved across the whole visible and near-infrared wavelength range, along with good transmittance (85%–90%). The broadband large-area high-performance polarizer operating down to deep ultraviolet wavelength opens up applications including semiconductor lithography and metrology applications.
Both high contrast and high transmittance are preferred for optical polarizers. To achieve high transmittance for aluminum nanowire-grid polarizers, a narrow linewidth is required. In this letter, aluminum nanowire-grid polarizers with 30-nm-wide linewidth and 200nm depth were fabricated by UV-nanoimprint lithography, which leads to ultrahigh transmittance. To achieve a high contrast, the authors fabricated the 30-nm-wide aluminum nanowire structures on both sides of the glass wafers. An extremely high contrast up to 10 000:1 was achieved, in the visible range, along with good transmittance of 83%–87% for the double-side aluminum nanowire-grid polarizers.
We developed a new type of wire-grid polarizer that has achieved excellent optical performance and reliability. The nanowire-grid polarizer is based on a fully optimized innovative design structure that consists of not only the core nanowire grid but also the surrounding multilayer thin-film structures. The surrounding structures are designed for antireflectivity to provide the best possible efficiency as well as for device reliability to provide the best possible handling robustness and environmental durability. The core nanowire grid utilizes nanosized high-aspect-ratio dielectric walls as a support for forming a high-aspect-ratio metal nanowire grid that significantly reduces energy loss as a result of metal absorption for the transmitted beam while providing a high extinction ratio of the blocked beam. The developed high-quality nanowire-grid polarizer has potential for use in many integrated optical applications.
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