The reactions of Co2(CO)8 and submicron cobalt particles with Cu(hfac)2 (hfac = hexafluoroacetylacetonate) were studied in toluene. Reactions between these species in the gas phase
were studied in a hot-wall, parallel-plate chemical vapor deposition (CVD) reactor. Similar
results were obtained with both methods. The overall chemical reactions can be expressed
by the following equations: 2Cu(hfac)2 + Co2(CO)6 → 2Cu + 2Co(hfac)2 + 8CO and Cu(hfac)2 + Co → Cu +Co(hfac)2. These results suggested that Co2(CO)8 is not a good source
precursor for CVD of Cu−Co binary films when used in conjunction with copper(II) and
some copper(I) hexafluoroacetylacetonate compounds and that chemical etching of cobalt
metal by Cu(hfac)2 needs to be taken into account when depositing this binary film with
copper(I) and copper(II) hexafluoroacetylacetonate compounds as copper source precursors.
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