Mark J. Hampden‐Smith scite author profile

The chemical vapor deposition (CVD) of metals is a rapidly developing area in which metal-containing compounds are being synthesized as new precursors. This article reviews this area and discusses precursor design, reaction pathways, reactor types, and the influence of reactor operating conditions on film growth. We have gathered recent results for precursor design and CVD chemistry and show how analysis of results from CVD experiments can be used to assist in the development of new CVD precursors.

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Overview of Metal CVD

Kodas

Hampden‐Smith

1994

127

173

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A Review of Group 2 (Ca, Sr, Ba) Metal-Organic Compounds as Precursors for Chemical Vapor Deposition

Wojtczak

Fleig

Hampden‐Smith

1996

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