In this paper, the effects of annealing temperature and other process parameters on spin-coated indium oxide thin film transistors (In2O3-TFTs) were studied. The research shows that plasma pretreatment of glass substrate can improve the hydrophilicity of glass substrate and stability of the spin-coating process. With Fourier transform infrared (FT-IR) and X-ray diffraction (XRD) analysis, it is found that In2O3 thin films prepared by the spin coating method are amorphous, and have little organic residue when the annealing temperature ranges from 200 to 300 °C. After optimizing process conditions with the spin-coated rotating speed of 4000 rpm and the annealing temperature of 275 °C, the performance of In2O3-TFTs is best (average mobility of 1.288 cm2·V−1·s−1, Ion/Ioff of 5.93 × 106, and SS of 0.84 V·dec−1). Finally, the stability of In2O3-TFTs prepared at different annealing temperatures was analyzed by energy band theory, and we identified that the elimination of residual hydroxyl groups was the key influencing factor. Our results provide a useful reference for high-performance metal oxide semiconductor TFTs prepared by the solution method.
Textile electrodes for electrocardiogram (ECG) acquisition should be highly surface conductive and resistant to deterioration during the use of smart clothes in washing, stretching, and bending. In order to obtain conductive fabrics with great potential for practical application in ECG acquisition, thiol groups grafted polyester fabrics were coated with a condensed silver layer via electroless plating, where the electrical resistance was as low as 7.18 mΩ/sq. The stability of the conductive coating on the fabric in application was studied in the process of elongation, bending, oxidation, and washing. Polyester fiber has a high elasticity, the silver layer presented fracture trend after elongation, and the electrical resistance reached 14.74 mΩ/sq after 20% elongation. The conductivity of the fabric was less affected by bending, and silver layer fell off a little after 3000 bending cycles. After being placed in a constant temperature and humidity environment, the electrical resistance was almost unchanged after 9 weeks. The surface square resistance of the fabric is 0.93 Ω/sq after 200 washing cycles because of the high adhesion of silver layer to the thiol groups modified fabrics. The textile electrodes were embedded in smart garment to capture the ECG signals of a human in running states. The ECG waveform was still clear after 200 washing cycles and the measured heart rate increased with the increase of movement speed. The excellent performance of as-prepared conductive fabrics shows the feasibility as textile electrodes in ECG acquisition for practical application.
Microwave dielectric materials are of great interest due to their applications in communication technology. The intrinsically low dielectric permittivity (generally less than 100) of traditional microwave dielectric materials has limited their capability in reducing the device size and developing various applications. In this paper, we report a microwave dielectric material, (La + Nb) co-doped BaSnO3, which exhibits both frequency- and temperature-independent colossal permittivity (ε > 103) over the frequency range from 10 Hz to microwave region (∼1 GHz) while retaining the ultra-low dielectric loss of 4 × 10–4, equivalent to a quality factor Q f (GHz) ∼2500. Systemic defect analysis and density functional theory calculations suggest that negatively charged La and positively charged Nb octahedra are correlated adjacent to each other along the [110] direction, forming defect-dipole clusters, which lead to their microwave dielectric properties. This work presents insights on the development of microwave dielectric materials that offer many potentials for microwave dielectric devices and their associated applications in future communication technology.
Cellulose-based electroactive actuators are promising candidates for biomimetic robots and biomedical applications due to their lightweight, high mechanical strength, and natural abundance. However, cellulose-based electroactive actuators exhibit lower actuation performance than traditional conductive polymer actuators. This work reports a fast-response cellulose-based electroactive actuator based on 2,2,6,6-tetramethylpiperidine-1-oxyl (TEMPO) oxidized nanocellulose (TOCNF) film with layered structure fabricated by evaporation, and gold electrodes prepared by ion sputtering. The residual ions during the TEMPO oxidation process and the layered structure due to self-assembly accelerate the ion migration efficiency in actuators. The proposed actuator can reach a tip displacement of 32.1 mm at a voltage of 10 V and deflect 60° in 5 s. After applying a reverse 10 V voltage, the actuator can also be quickly deflected (42.5 mm). In addition, the actuator also shows high electrical actuation performance at low voltage (5 V). The excellent electroactive performance of as-prepared TOCNF/Au enables the feasibility to be applied to actuators.
In this paper, indium-gallium-zinc-oxide thin film transistors (TFTs) were successfully fabricated by the pulsed laser deposition Ga-doped ZnO (GZO) films as source/drain (S/D) electrodes. And the GZO electrodes involved were prepared at room temperature. It was found that with the increase of Ga doping content, the electrical properties of TFTs increased first and then decreased. When the doping amount of Ga2O3 was 2 wt.%, the TFT showed excellent performance with a μ sat of 12.22 cm2V−1 s−1, an I on/I off of 6.4 × 107, a V on of 0 V and a SS of 0.082 V decade−1. At this time, the contact between the S/D electrodes and the active layer was ohmic and the TFT had a very low contact resistance with an R SD-eff of 0.064 Ω cm2. In addition, the device exhibited good electrical stability, and the drift of V on is only 2/−0.2 V at a positive/negative bias gate voltage of +10 V/−10 V with a duration of 5400 s under dark condition.
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