Performances of thin film transistors with Ga-doped ZnO source and drain electrodes

Abstract

In this paper, indium-gallium-zinc-oxide thin film transistors (TFTs) were successfully fabricated by the pulsed laser deposition Ga-doped ZnO (GZO) films as source/drain (S/D) electrodes. And the GZO electrodes involved were prepared at room temperature. It was found that with the increase of Ga doping content, the electrical properties of TFTs increased first and then decreased. When the doping amount of Ga2O3 was 2 wt.%, the TFT showed excellent performance with a μ sat of 12.22 cm2V−1 s−1, an I on/I off of 6.4 × 107, a V on of 0 V and a SS of 0.082 V decade−1. At this time, the contact between the S/D electrodes and the active layer was ohmic and the TFT had a very low contact resistance with an R SD-eff of 0.064 Ω cm2. In addition, the device exhibited good electrical stability, and the drift of V on is only 2/−0.2 V at a positive/negative bias gate voltage of +10 V/−10 V with a duration of 5400 s under dark condition.

Effects of Laser Treatment of Terbium-Doped Indium Oxide Thin Films and Transistors

“…People are increasingly demanding features of display devices, such as high resolution, thin, flexible, transparent and rich in color. The metal oxide thin film transistor (MOTFT) has the advantages of high mobility (1–100 cm 2 /V·s) and good film uniformity [ 1 , 2 , 3 , 4 ]. It has become a strong competitor in the display backplane industry represented by an active matrix liquid crystal display and active matrix organic light-emitting diode.…”

Application of Laser Treatment in MOS-TFT Active Layer Prepared by Solution Method

“…People continue to have higher requirements for the characteristics of display devices, such as high resolution, thin, flexible, transparent, rich color and so on. Metal oxide semiconductor thin film transistor (MOS-TFT) has the advantages of high mobility (1-100 cm 2 /Vs) and good film uniformity [1][2][3][4][5]. It has become a strong competitor in the display backplane industry represented by active matrix liquid crystal display and active matrix organic light emitting diode.…”

“…According to the difference of semiconductor active layer materials, TFT can be divided into the following four categories: a-Si TFT, p-Si TFT, OTFT and MOS-TFT [6][7][8][9]. Among them, MOS-TFT has the advantages of high field effect mobility, high uniformity, good electrical stability and high transparency, which is suitable for the future display preparation requirements, such as large size and flexibility [1,4,10]. transparency, which is suitable for the future display preparation requirements, such as large size and flexibility [1,4,10].…”

“…Among them, MOS-TFT has the advantages of high field effect mobility, high uniformity, good electrical stability and high transparency, which is suitable for the future display preparation requirements, such as large size and flexibility [1,4,10]. transparency, which is suitable for the future display preparation requirements, such as large size and flexibility [1,4,10]. Solution-processed deposition offers the advantages of a simple process, high throughput, high material utilization rate, and easy control of chemical components which provides the possibility for large-area preparation of metal oxide semiconductor [10][11][12][13][14].…”

“…Micromachines 2021, 12, x FOR PEER REVIEW 2 of 15 transparency, which is suitable for the future display preparation requirements, such as large size and flexibility [1,4,10]. Solution-processed deposition offers the advantages of a simple process, highthroughput, high material utilization rate, and easy control of chemical components, which provides the possibility for large-area preparation of metal oxide semiconductor [10][11][12][13][14].…”