This paper describes a SRAM design using the pipelining technique which has been used in many microprocessors extensively. The main purpose to design SRAM with the technique of pipelining is to improve the whole performance of the SRAM based on the characteristic of the pipelining technique that it can incease exponentially the circuit performance. A 2-stage pipelining 4K SRAM has been verified by simulation, and the results demonstrate that the performance of the read operation can be improved twice if the pipelining technique has been used compared with the conventional SRAM operation.
This paper investigates the mechanical properties of a new type of ultra-lightweight geopolymer composite (ULGC) exposed to elevated temperatures up to 700 °C. This ULGC materials, using ground granulated blast furnace slag, fly ash, and silica fume as the precursor as well as fly ash cenosphere as lightweight aggregates, has a density of less than 1400 kg/m3 and compressive strength up to 40 MPa and thus it has high structural efficiency compared to other types of concrete materials. The effect of polyvinyl alcohol (PVA) fiber dosage and PVA fiber length on the compressive strength, bending strength as well as mass loss of ULGCs after elevated temperature exposure were evaluated, combining a two-factor analysis of variance. The results indicated that when the temperature was below 300 °C, the PVA fiber could improve the mechanical properties of ULGC. However, when the temperature was higher than 300 °C, due to the melting of fibers, the positive effect of fiber dosage on bending strength significantly reduced, and fiber dosage exhibited a negative effect on compressive strength. The ULGCs containing 6mm and 18mm fibers showed better bending strength, while the effect of fiber length on compressive strength of ULGC was negligible.
This paper describes a circuit which can enhance the robustness of the subthreshold 6T SRAM bitcell. The proposed circuit can dynamically adjust the body voltages of the PMOS transistors in order to enhance the robustness of the subthreshold 6T SRAM bitcell by detecting the variation of the threshold voltage. The simulation results under 300mV in 65nm technology demonstrate that the mean values of the read and hold static noise margin (SNM) of the subthreshold 6T SRAM bitcell have been improved by 18% and 0.7%, respectively, meanwhile the standard values of the read and hold SNM have improved by 82% and 29.4%, respectively, by adopting the proposed circuit. Moreover, the proposed circuit functions well in a wide range of supply voltage from 0.2V to 0.5V.
The conductive path formed by the interstitial Ag or substitutional Ag in HfO2 was investigated by the Vienna ab initio. The calculated results indicated that the ordering of interstitial Ag increases the conductivity of HfO2 by forming a conductive filament. The contribution to the electrical conductivity of Ag ions in the material of HfO2 was investigated.
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