We investigated optical properties of Sb-doped p-type ZnO films grown on n-Si (100) substrates by oxygen plasma-assisted pulsed laser deposition. Two acceptor states, with the acceptor levels of 161 and 336 meV, are identified by well-resolved photoluminescence spectra. Under oxygen-rich conditions, the deep acceptor in Sb-doped ZnO film is Zn vacancy. The shallow acceptor is SbZn-2VZn complex induced by Sb doping. The origin of p-type behavior in Sb-doped ZnO has been ascribed to the formation of SbZn-2VZn complex.
Unusual vibronic fine structures of the ∼3.0 eV violet emission from ion-implanted ZnO nanorods have been investigated by photoluminescence (PL). A set of equally separated peaks with energy spacing of 72 meV, which corresponds to the longitudinal optical (LO) phonon energy of ZnO, were well resolved in the low-temperature PL spectra. The overall emission band can be perfectly described on the basis of the LO phonon-assisted transition with the Huang–Rhys factor of 1.98, indicating intermediate electron-phonon coupling. The thermal quenching of PL gives rise to an activation energy of ∼160 meV, which is attributed to the energy level of acceptor-like defects introduced by implantation.
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