A comprehensive full-scale 3D simulation study of statistical variability and reliability in emerging, scaled FinFETs on SOI substrate with gate-lengths of 20nm, 14nm and 10nm and low channel doping is presented. Excellent electrostatic integrity and resulting tolerance to low channel doping are perceived as the main FinFET advantages, resulting in a dramatic reduction of statistical variability due to random discrete dopants (RDD). It is found that line edge roughness (LER), metal gate granularity (MGG) and interface trapped charges (ITC) dominate the parameter fluctuations with different distribution features, while RDD may result in relatively rare but significant changes in the device characteristics.

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The rs11777210 is a potential predictive biomarker of CRC susceptibility, and KBTBD11 functions as a putative tumor suppressor in tumorigenesis. Our study highlighted the high CRC risk of people carrying rs6983267 G and rs11777210 C alleles, and provided possible biological mechanism of the interaction.

No abstract