Phase change materials (PCMs) are attracting more and more attentions as enabling materials for tunable nanophotonics. They can be processed into functional photonic devices through customized laser writing, providing great flexibility for fabrication and reconfiguration. Lithium Niobate (LN) has excellent nonlinear and electro-optical properties, but is difficult to process, which limits its application in nanophotonic devices. In this paper, we combine the emerging low-loss phase change material Sb2S3 with LN and propose a new type of high Q resonant metasurface. Simulation results show that the Sb2S3-LN metasurface has extremely narrow linewidth of 0.096 nm and high quality (Q) factor of 15,964. With LN as the waveguide layer, strong nonlinear properties are observed in the hybrid metasurface, which can be employed for optical switches and isolators. By adding a pair of Au electrodes on both sides of the LN, we can realize dynamic electro-optical control of the resonant metasurface. The ultra-low loss of Sb2S3, and its combination with LN, makes it possible to realize a new family of high Q resonant metasurfaces for actively tunable nanophotonic devices with widespread applications including optical switching, light modulation, dynamic beam steering, optical phased array and so on.
Perfect absorbers are of great importance in various applications such as photodetectors, optical sensors and optical modulators. Recently, perfect absorption metasurface based on monolayer graphene has attracted lots of research interest. In this paper, a graphene-lithium niobate (LN) perfect absorption metasurface is constructed, where graphene works as a thin absorptive layer as well as a conductive electrode. The proposed device achieves 99.99% absorption at 798.42 nm and 1.14 nm redshift of the absorption peak is realized at 300 V(from -150 V to 150 V) external bias voltage through the electro-optical effect of LN, which enables the proposed device work as a electrically tunable absorber in the visible and near infrared range. The switching ratio of reflected light R/R0 could reach -44.08 dB with an applied voltage tuning from -150 V to 0 V at 798.42 nm. Our work demonstrates the potential of LN integrated high-Q resonant metasurface in realizing electro-optic tunable nanophotonic devices in the visible and near infrared band. It will promote the research of graphene integrated optoelectronic devices as well as LN based tunable nanophotonic devices which have widespread applications such as modulators and optical phase arrays.
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