Q. (2016). Raman spectroscopy of atomically thin two-dimensional magnetic iron phosphorus trisulfide (FePS3) crystals. 2D Materials, 3(3), 031009-.

The physical and electronic properties of ultrathin two-dimensional (2D) layered nanomaterials are highly related to their thickness. Therefore, the rapid and accurate identification of single- and few- to multilayer nanosheets is essential to their fundamental study and practical applications. Here, a universal optical method has been developed for simple, rapid, and reliable identification of single- to quindecuple-layer (1L-15L) 2D nanosheets, including graphene, MoS2, WSe2, and TaS2, on Si substrates coated with 90 or 300 nm SiO2. The optical contrast differences between the substrates and 2D nanosheets with different layer numbers were collected and tabulated, serving as a standard reference, from which the layer number of a given nanosheet can be readily and reliably determined without using complex calculation or expensive instrument. Our general optical identification method will facilitate the thickness-dependent study of various 2D nanomaterials and expedite their research toward practical applications.

We present successful synthesis of large area atomically thin MoSe2 films by selenization of MoO3 in a vapor transport chemical vapor deposition (CVD) system. The homogeneous thin film can reach an area of 1 × 1 cm(2) consisting primarily of monolayer and bilayer MoSe2 film. Scanning transmission electron microscopy (STEM) images reveal the highly crystalline nature of the thin film and the atomic structure of grain boundaries in monolayers. Raman and photoluminescence spectroscopy confirm the high quality of as-grown MoSe2 in optics, and electronic transport measurements highlight the potential applications of the sample in nanoelectronics.

Graphitic carbon nitride (g-C3N4), a metal-free semiconductor with a band gap of 2.7 eV, has received considerable attention owing to its fascinating photocatalytic performances under visible-light. g-C3N4 exhibits high thermal and chemical stability and non-toxicity such that it has been considered as the most promising photocatalyst for environmental improvement and energy conservation. Hence, it is of great importance to obtain high-quality g-C3N4 and gain a clear understanding of its optical properties. Herein, we report a high-yield synthesis of g-C3N4 products via heating of high vacuum-sealed melamine powder in an ampoule at temperatures between 450 and 650 °C. Using transmission electron microscopy (TEM), scanning transmission electron microscopy (STEM), electron energy loss spectroscopy (EELS), thermogravimetric analysis (TGA), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS), the chemical composition and crystallization of the as-produced g-C3N4 are demonstrated. A systematic optical study of g-C3N4 is carried out with several approaches. The optical phonon behavior of g-C3N4 is revealed by infrared and Raman spectroscopy, and the emission properties of g-C3N4 are investigated using photoluminescence (PL) spectroscopy, while the photocatalytic properties are explored by the photodegradation experiment.

The two-dimensional layer of molybdenum disulfide (MoS2) exhibits promising prospects in the applications of optoelectronics and valleytronics. Herein, we report a successful new process for synthesizing wafer-scale MoS2 atomic layers on diverse substrates via magnetron sputtering. Spectroscopic and microscopic results reveal that these synthesized MoS2 layers are highly homogeneous and crystallized; moreover, uniform monolayers at wafer scale can be achieved. Raman and photoluminescence spectroscopy indicate comparable optical qualities of these as-grown MoS2 with other methods. The transistors composed of the MoS2 film exhibit p-type performance with an on/off current ratio of ∼10(3) and hole mobility of up to ∼12.2 cm(2) V(-1) s(-1). The strategy reported herein paves new ways towards the large scale growth of various two-dimensional semiconductors with the feasibility of controllable doping to realize desired p- or n-type devices.