In this work, we synthesized Cu‐doped ZnO nanowires through a vapor–liquid–solid process. We investigated their composition and photoluminescence properties; and we found the Cu‐doped ZnO nanowires have a c‐axis preferential growth direction, uniform Cu distribution and a characteristic spectrum. We further investigated their electrical property by fabricating a simple field effect transistor based on an individual C‐shaped Cu‐doped ZnO nanowire. The electrical studies reveal that the Cu‐doped ZnO nanowire has n‐type conductivity and ultralow electron mobility.
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