In this study, UV-visible flexible resistivity-type photo-detectors were demonstrated with CdS-nanowires (NWs) percolation network channel and Ag-NWs percolation network electrode. The devices were fabricated on Mixed Cellulose Esters (MCE) membrane using a lithographic filtration method combined with a facile non-transfer process. The photo-detectors demonstrated strong adhesion, fast response time, fast decay time, and high photo sensitivity. The high performance could be attributed to the high quality single crystalline CdS-NWs, encapsulation of NWs in MCE matrix and excellent interconnection of the NWs. Furthermore, the sensing performance was maintained even the device was bent at an angle of 90°. This research may pave the way for the facile fabrication of flexible photo-detectors with high performances.

Many advanced materials have been developed for organic field-effect transistors (OFETs) or thin-film transistors (TFTs) based on organic and organic hybrid materials. However, although many new OFETs exhibit superior characteristic parameters (such as high mobility), most of them show nonideal performances that have strongly limited progress in the design of molecules, the understanding of transport mechanisms, and the circuit applications of OFETs. In this review, the device physics of ideal and nonideal OFETs is discussed first to understand the factors that limit effective mobility in semiconducting channels, distort the potential distribution, or reduce the drift electric field. Then, recent advances in optimizing the material combinations, device structures, and fabrications of OFETs toward ideal transistors are discussed. Based on the good control of materials and interfaces, some new and novel concepts to utilize the nonideal properties of OFETs to build low-power circuits and integrated sensors are also discussed.

In this Letter, three-terminal transistor-based artificial synapses are proposed that are simply constructed with a solution-processed InOx channel and AlOx electrolyte gate. Paired pulse facilitation and short-term potentiation (STP) are realized and modulated by adjusting the amplitude, duration, and interval time of the spiking pulses. Furthermore, the STP is transferred to long-term potentiation (LTP) by increasing the pulse amplitude and number. In addition, spike-timing-dependent plasticity is demonstrated. The high density hydrogen in low temperature processed AlOx is adsorbed on InOx electrostatically or electrochemically, which plays a role in synaptic behaviors. This study provides useful information to understand neuromorphic devices based on solution processed oxide dielectrics and oxide semiconductors.

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Electrolyte-gated transistors can function as switching elements, artificial synapses and memristive systems, and could be used to create compact and powerful neuromorphic computing networks. However, insight into the underlying physics of such devices, including complex ion dynamics and the resulting capacitances, remains limited. Here we report a concise model for the transient ion-dynamic capacitance in electrolyte-gated transistors. The theory predicts that plasticity, high apparent mobility, sharp subthreshold swing and memristive conductance can be achieved—on demand—in a single transistor by appropriately programming the interfacial ion concentrations or matching the scan speed with ion motions. We then fabricate such multimode transistors using common solid-state electrolyte films and experimentally confirm the different capabilities. We also show in software that the multimode devices could be used to create neural networks that can be switched between conventional artificial neural networks, recurrent neural networks and spiking neural networks.