We design a novel slow-light silicon photonic crystal waveguide which can operate over an extremely wide flat band for ultrafast integrated nonlinear photonics. By conveniently adjusting the radii and positions of the second air-holes rows, a flat slow-light low-dispersion band of 50 nm is achieved numerically. Such a slow-light photonic crystal waveguide with large flat low-dispersion wideband will pave the way for governing the femtosecond pulses in integrated nonlinear photonic platforms based on CMOS technology.
Using the sum frequency generation cross-correlation frequency-resolved optical gating (SFG-XFROG) measurement setup, we observed the soliton evolution of low energy pulse in an Si photonic crystal waveguide, and it exhibited the pulse broadening, blue shift, and evident pulse acceleration. The soliton evolution was also investigated by nonlinear Schrödinger equation (NLSE) modelling simulation, and the simulated results agreed well with the experimental measurements. The effects of waveguide length on the pulse evolution were analyzed; the results showed that the pulse width changed periodically with increasing waveguide length. The results further the understanding of the ultra-fast nonlinear dynamics of solitons in silicon waveguides, and are helpful to soliton-based functional elements on CMOS-compatible platforms.
We experimentally measured the femtosecond pulse transmission through a silicon-on-insulator (SOI) nanowire waveguide under different temperatures and input pulse energy with a cross-correlation frequency-resolved optical gating (XFROG) measurement setup. The experimental results demonstrated that the temperature and pulse energy dependence of the Si photonic nanowire waveguide (SPNW) is interesting rather than just monotonous or linear, and that the suitable temperature and pulse-energy range is as suggested in this experiment, which will be valuable for analyzing the practical design of the operating regimes and the fine dispersion engineering of various ultrafast photonic applications based on the SPNWs. The research results will contribute to developing the SPNWs with photonic elements and networks compatible with mature complementary metal–oxide–semiconductors (CMOS).
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