Vapor–solid
growth (VSG) is a cost-effective technique to
synthesize Bi2Se3 materials with promising thermoelectric
(TE) performance. In this work, smooth Bi2Se3 thin films with enhanced TE performance have been realized through
regulating the carrier gas flow rate during the VSG process. The optimized
morphology improves the electrical conductivity and decouples its
interplay withthe Seebeck coefficient in Bi2Se3. As a result, our Bi2Se3 synthesized at 150
sccm gas flow rate exhibited a Seebeck coefficient around −100
μV K–1 and a power factor (PF) of 1.59 ×
10–3 W m–1 K–2, which is higher than those of existing thin films and the single-crystal
bulk form. This work provides guidance for the controllable preparation
of Bi2Se3 thin films with low roughness and
high TE performance for potential applications in micro-/nanodevices.
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