Major disadvantages of black phosphorus (BP) are its poor air-stability and poor solubility in common organic solvents. The best way to solve this problem is to incorporate BP into a polymer backbone or a polymer matrix to form novel functional materials that can provide both challenges and opportunities for new innovation in optoelectronic and photonic applications. As a proof-of concept application, we synthesized in situ the first highly soluble conjugated polymer-covalently functionalized BP derivative (PDDF-g-BP) which was used to fabricate a resistive random access memory (RRAM) device with a configuration of Au/PDDF-g-BP/ITO. In contrast to PDDF without memory effect, PDDF-g-BP-based device exhibits a nonvolatile rewritable memory performance, with a turn-on and turn-off voltages of +1.95 V and -2.34 V, and an ON/OFF current ratio of 10 . The current through the device in both the ON and OFF states is still kept unchanged even at 200th switching cycle. The PDDF/BP blends show a very unstable memory performance with a very small ON/OFF current ratio.

Reversible addition-fragmentation chain transfer (RAFT) is considered to be one of most famous reversible deactivation radical polymerization protocols. Benefiting from its living or controlled polymerization process, complex polymeric architectures with controlled molecular weight, low dispersity, as well as various functionality have been constructed, which could be applied in wide fields, including materials, biology, and electrology. Under the continuous research improvement, main achievements have focused on the development of new RAFT techniques, containing fancy initiation methods (e.g., photo, metal, enzyme, redox and acid), sulfur-free RAFT system and their applications in many fields. This review summarizes the current advances in major bright spot of novel RAFT techniques as well as their potential applications in the optoelectronic field, especially in the past a few years.

By using a one-step synthetic strategy, the first conjugated polymer covalently functionalized BPQDs have been synthesized. This material exhibits an excellent nonvolatile rewritable memory effect, with a large ON/OFF current ratio (>107) and a low switch-on voltage (−0.89 V).

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compounds and inadequate quality of films for use as active materials. Therefore, many in situ film preparation approaches have been developed, such as polymer selfassembly [2] and in situ polymerization. [3] Of all approaches, electropolymerization has become increasingly popular because it enables fabricating uniform films rapidly. To date, many electroactive building blocks, such as carbazole, [4] aniline, [5] pyrrole, [6] thiophene, [7] and porphyrin, [8] have been reported. However, the preparation of porous polymer films through the electropolymerization method has been rarely reported.Memristor, which has wide applications in resistive access memory, [9] logic, [10] and neuro, [11] was originally envisioned in 1971 by Leon Chua and first realized with a 2-terminal device based on inorganic TiO 2 in 2008 by Williams and his coworkers. [12] Since then, memristors based on conductive/semiconductive polymers have been gradually developed due to the features of polymers, e.g., low cost, easy tunable optoelectronic properties, solvent processability, and flexibility. [9][10][11]13] With the miniaturization of electronic device, development and investigation of micropower -source which can be integrated with Si chips have been rising as the research focus. In-plane all-solid-state micro-supercapacitor (MSC) was one of the most popular candidates because of its high power density and ultrathin character. [14] In recent years, many electrode materials, especially carbon materials, have been developed in order to boost the performance. [15] However, carbon Over the past decades, numerous scientists have focused on designing complicated monomers, developing new synthesis protocols, and optimizing chemical structures for realizing high-performance organic or polymer electronics and energy storage devices. However, much less attention has been paid to ionic-and radical-rich porous organic films, which are essential components of aforementioned devices. In this study, an air-stable, large-area, freestanding, and viologen-linked ionic porous polymer (denoted as IPP-V) film is developed in situ through electrochemical polymerization. This film is applied to a device by sandwiching it between indium tin oxide (ITO) and Au (i.e., ITO/ IPP-V/Au); the device exhibits a memristive behavior with an ON-OFF current ratio of ≈2. After the IPP-V film is subjected to thermal pyrolysis at 500 °C, the as-produced film (denoted as IPP-V-500) acts as an active material for an in-plane micro-supercapacitor and exhibits a high volumetric capacitance level of up to 4.44 F cm −3 . This work not only offers a new and convenient strategy toward large-area ionic porous polymer films for memristor, but also provides a new porous polymer derived carbon film for energy storage.

Auxetic perforated mechanical metamaterials (APMMs) with artificially designed architectures have attracted growing attention in recent years due to the relatively simple fabrication process and their unusual physical properties for broad ranges of potential applications. We present a new topological configuration of APMMs with low porosity that simultaneously exhibits the properties of negative Poisson’s ratio and band gaps. The finite element method is employed to investigate the effects of the parameters of void porosity, aspect ratio and chord length on the Poisson’s ratio and the range of band gaps. Our results demonstrate that a large range of Poisson’s ratio can be achieved with low porosity, and interestingly, the Poisson’s ratio and the frequency of lower band gap edge are decreased monotonically as the chord length increases. Furthermore, the comparison of stress–strain behaviors, tensile strength, and acoustic transmission characteristics between the proposed and the classical configurations of low porosity APMMs is given. The results show that the new configuration owns special underlying tensile deformation pattern and long ligament, which effectively alleviates the stress concentration caused by cusp and enhances the tensile strength of the structure. Moreover, compared to previous structural configurations, the proposed configuration shows lower bandwidth and better vibration control property.

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Major disadvantages of blackphosphorus (BP) are its poor air-stability and poor solubility in common organic solvents.T he best wayt os olve this problem is to incorporate BP into ap olymer backbone or ap olymer matrix to form novel functional materials that can provide both challenges and opportunities for new innovationi no ptoelectronic and photonic applications.A sap roof-of concept application, we synthesized in situ the first highly soluble conjugated polymercovalently functionalizedB Pd erivative (PDDF-g-BP) which was used to fabricate ar esistive random access memory (RRAM) device with aconfiguration of Au/PDDF-g-BP/ITO. In contrast to PDDF without memory effect, PDDF-g-BPbased device exhibits anonvolatile rewritable memory performance,w ith at urn-on and turn-off voltages of + 1.95 Va nd À2.34 V, and an ON/OFF current ratio of 10 4 .T he current through the device in both the ON and OFF states is still kept unchanged even at 200th switching cycle.T he PDDF/BP blends show avery unstable memory performance with avery small ON/OFF current ratio.Asanovel two-dimensional layered material found in the post-graphene age,f ew-layer black phosphorus (BP) has found many potential applications in the fields of field-effect transistors,o ptical modulators,m ode-locked and Q-switched lasers,o ptical limiters,a nd others due to its unique and superior properties such as higher charge-carrier mobility (ca. 10 3 cm 2 V À1 S À1 ), thickness-depended and tunable direct band gap (0.3-1.5 eV), strong intrinsic in-plane anisotropy,a nd broadband nonlinear optical response. [1][2][3][4][5][6][7][8][9][10] Similar to C 60 , carbon nanotubes and graphene,B Ph as also very poor solubility in common organic solvents,l eading to great difficulty in fabricating BP-based thin film devices by using solution-processable techniques.M ore importantly,B Pw ill degrade rapidly in the presence of oxygen and moisture within the scope of hours.T oi mprove the environmental stability of few-layer BP,anumber of essential strategies, including encapsulation, [11] non-covalent functionalization, [12,13] covalent chemical modification [14] and high boiling solvent exfoliation, [15] have been employed to suppress the chemical degradation of exfoliated BP.It has been recognized that design and preparation of BPbased soluble organic/polymeric functional materials are ak ey issue for exploring more applications of BP,w hich would most likely be driven by breakthroughs in chemistry of BP that combine the economy of scale with function in near future.Ryder et al. are the first to report the organic chemical modification of few-layer BP,w hich was prepared by mechanically exfoliating bulk BP on Si/SiO 2 substrates,w ith 4-nitrobenzene-diazonium (4-NBD) and 4-methoxybenzenediazonium (4-MBD) tetrafluoroborate salts. [14] However,t he resultant material could not be directly used for fabrication of electronic devices by using traditional spin-coating technique due to its poorer solubility in organic solvents.Inthis work, by using 4-bromobenzene-diazonium( ...